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1N1186RA

Description
Rectifier Diode, 1 Phase, 1 Element, 40A, 200V V(RRM), Silicon, DO-5,
CategoryDiscrete semiconductor    diode   
File Size42KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1N1186RA Overview

Rectifier Diode, 1 Phase, 1 Element, 40A, 200V V(RRM), Silicon, DO-5,

1N1186RA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
applicationPOWER
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current800 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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