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1N3008RA

Description
Zener Diode, 120V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4
CategoryDiscrete semiconductor    diode   
File Size76KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

1N3008RA Overview

Zener Diode, 120V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4

1N3008RA Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionO-MUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance75 Ω
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum knee impedance1200 Ω
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
polarityUNIDIRECTIONAL
Maximum power dissipation10 W
Certification statusNot Qualified
Nominal reference voltage120 V
Maximum reverse current5 µA
surface mountNO
technologyZENER
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum voltage tolerance10%
Working test current20 mA
Base Number Matches1
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