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1SV314(TPH3)

Description
VARACTOR DIODE,SINGLE,SMT
CategoryDiscrete semiconductor    diode   
File Size151KB,3 Pages
ManufacturerECLIPTEK
Websitehttp://www.ecliptek.com
Download Datasheet Parametric View All

1SV314(TPH3) Overview

VARACTOR DIODE,SINGLE,SMT

1SV314(TPH3) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerECLIPTEK
package instructionESC, 1-1G1A, 2 PIN
Reach Compliance Codeunknown
Is SamacsysN
Diode typeVARIABLE CAPACITANCE DIODE
Maximum repetitive peak reverse voltage10 V
surface mountYES
Base Number Matches1
1SV314
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SV314
VCO for UHF Band Radio
Unit: mm
High Capacitance Ratio
Low Series Resistance
: C
0.5V
/ C
2.5V
= 2.5 (Typ.)
: r
s
= 0.35
(Typ.)
Useful for Small Size Tuner
Absolute Maximum Ratings
(Ta = 25°C)
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
T
j
T
stg
RATING
10
125
−55
to 125
UNIT
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
operating temperature/current/voltage, etc.) are within the
JEITA
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
1−1G1A
Toshiba Semiconductor Reliability Handbook (“Handling
Weight:0.0014g (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
V
R
I
R
C
0.5V
C
2.5V
C
0.5V
/ C
2.5V
r
s
I
R
= 1μA
V
R
= 10 V
V
R
= 0.5 V, f = 1 MHz
V
R
= 2.5 V, f = 1 MHz
V
R
= 1 V, f = 470 MHz
TEST CONDITION
MIN
10
7.3
2.75
2.4
TYP.
2.5
0.35
MAX
3
8.4
3.4
0.45
UNIT
V
nA
pF
pF
Marking
Start of commercial production
1998-06
1
2014-03-01

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