BSP129
SIPMOS Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
®
Product Summary
V
DS
R
DS(on),max
I
DSS,min
240
6
0.05
V
Ω
A
PG-SOT-223
Type
BSP129
BSP129
Package
PG-SOT-
PG-SOT-
223
Ordering Code
Q67000-S073
Q67042 S4294
Tape and Reel Information
E6327: 1000 pcs/reel
E6906: 1000 pcs/reel
sorted in
V
GS(th)
bands
1)
Marking
BSP129
BSP129
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.36 A,
V
DS
=192 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.35
0.28
1.4
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
Class 1
V
P
tot
T
j
,
T
stg
T
A
=25 °C
1.8
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 1.1
page 1
2005-02-22
BSP129
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4)
SMD version, device on PCB
R
thJS
R
thJA
minimal footprint
6 cm
2
cooling area
1)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
V
(BR)DSS
V
GS
=-3 V,
I
D
=250 µA
V
GS(th)
I
D(off)
V
DS
=3 V,
I
D
=108 µA
V
DS
=240 V,
V
GS
=-3 V,
T
j
=25 °C
V
DS
=240 V,
V
GS
=-3 V,
T
j
=125 °C
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
I
GSS
I
DSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=0 V,
V
DS
=10 V
V
GS
=0 V,
I
D
=25 mA
V
GS
=10 V,
I
D
=0.35 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.28 A
240
-2.1
-
-
-1.4
-
-
-1
0.1
µA
V
-
-
-
-
-
-
25
115
70
K/W
Values
typ.
max.
Unit
-
-
50
-
-
0.18
-
-
-
6.5
4.2
0.36
10
10
-
20
6.0
-
S
nA
mA
Ω
Threshold voltage
V
GS(th)
sorted in bands
3)
J
K
L
M
N
2)
V
GS(th)
V
DS
=3 V,
I
D
=108 µA
-1.2
-1.35
-1.5
-1.65
-1.8
-
-
-
-
-
-1
-1.15
-1.3
-1.45
-1.6
V
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(single layer, 70 µm thick) copper area for
drain connection. PCB is vertical in still air.
3)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 1.1
page 2
2005-02-22
BSP129
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
A
=25 °C
V
GS
=-3 V,
I
F
=0.35 A,
T
j
=25 °C
V
R
=120 V,
I
F
=0.2 A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.79
53
65
0.35
1.4
1.2
80
97
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=192 V,
I
D
=0.2 A,
V
GS
=-3 to 5 V
-
-
-
-
0.24
1.7
3.8
0.37
0.36
2.6
5.7
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=120 V,
V
GS
=-2...5 V,
I
D
=0.2 A,
R
G
=7.6
Ω
V
GS
=-3 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
82
12
6
4.4
4.1
22
35
108
16
10
6.6
6.2
33
53
ns
pF
Values
typ.
max.
Unit
Rev. 1.1
page 3
2005-02-22
BSP129
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
2
0.4
1.5
0.3
P
tot
[W]
1
I
D
[A]
0
40
80
120
160
0.2
0.5
0.1
0
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
2
limited by on-state
resistance
10 µs
0.5
100 µs
10
0
0.2
1 ms
10
-1
10 ms
Z
thJA
[K/W]
I
D
[A]
10
1
0.1
0.05
single pulse
0.02
10
-2
0.01
DC
10
-3
10
0
10
1
10
2
10
3
10
0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev. 1.1
page 4
2005-02-22
BSP129
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.7
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
-0.2 V
0V
0.1 V
0.2 V
0.5 V
-0.1 V
0.6
15
1V
0.5
0.4
R
DS(on)
[
Ω
]
I
D
[A]
10
0.3
0.5 V
0.2
0V
0.2 V
0.1 V
1V
5
10 V
0.1
-0.2 V
-0.1 V
0
0
2
4
6
8
10
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
1
0.6
0.8
0.5
0.4
0.6
g
fs
[S]
0.4
0.2
0
-2
-1
0
1
2
3
I
D
[A]
0.3
0.2
0.1
0
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
V
GS
[V]
I
D
[A]
Rev. 1.1
page 5
2005-02-22
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