BSP129L6906 datasheet, PDF - EEWORLD Datasheet

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BSP129L6906: DescriptionPower Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size228KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSP129L6906 Overview

Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP129L6906 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	GREEN, PLASTIC PACKAGE-4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V
Maximum drain current (Abs) (ID)	0.35 A
Maximum drain current (ID)	0.35 A
Maximum drain-source on-resistance	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W
Maximum pulsed drain current (IDM)	1.4 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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BSP129

SIPMOS Small-Signal-Transistor

Features

• N-channel

• Depletion mode

• dv /dt rated

• Available with

GS(th)

indicator on reel

Product Summary

DS(on),max

DSS,min

240

0.05

Ω

PG-SOT-223

Type

BSP129

Package

PG-SOT-

223

Ordering Code

Q67000-S073

Q67042 S4294

Tape and Reel Information

E6327: 1000 pcs/reel

E6906: 1000 pcs/reel

sorted in

GS(th)

bands

Marking

BSP129

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=70 °C

Pulsed drain current

D,pulse

=25 °C

=0.36 A,

=192 V,

di /dt =200 A/µs,

j,max

=150 °C

Value

0.35

0.28

1.4

Unit

Reverse diode dv /dt

dv /dt

kV/µs

Gate source voltage

ESD sensitivity (HBM) as per

MIL-STD 883

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

±20

Class 1

tot

stg

=25 °C

1.8

-55 ... 150

55/150/56

°C

see table on next page and diagram 11

Rev. 1.1

page 1

2005-02-22

BSP129L6906 Related Products

	BSP129L6906	BSP129L6327
Description	Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Is it Rohs certified?	conform to	conform to
package instruction	GREEN, PLASTIC PACKAGE-4	GREEN, PLASTIC PACKAGE-4
Contacts	4	4
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V	240 V
Maximum drain current (Abs) (ID)	0.35 A	0.35 A
Maximum drain current (ID)	0.35 A	0.35 A
Maximum drain-source on-resistance	6 Ω	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W	1.8 W
Maximum pulsed drain current (IDM)	1.4 A	1.4 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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