Bulletin I2405 rev. A 07/00
10RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1200V V
DRM
/ V
RRM
10A
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
10RIA
10
85
25
225
240
255
233
100 to 1200
110
- 65 to 125
Unit
A
°C
A
A
A
A
2
s
A
2
s
V
µs
°C
Case Style
TO-208AA (TO-48)
www.irf.com
1
10RIA Series
Bulletin I2405 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
10
20
40
60
10RIA
80
100
120
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage (1)
V
100
200
400
600
800
1000
1200
V
RSM
, maximum non-
repetitive peak voltage (2)
V
150
300
500
700
900
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
20
10
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2)
For voltage pulses with t
p
≤
5ms
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
10RIA
10
85
25
225
240
190
200
Units
A
°C
A
Conditions
180° conduction, half sine wave
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
A
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
A
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
255
233
180
165
I
2
√t
Maximum I
2
√t
for fusing
2550
1.10
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
1.39
V
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
24.3
mΩ
16.7
1.75
130
200
(I >
π
x I
T(AV)
), T
J
= T
J
max.
I
pk
= 32A, T
J
= 25°C t
p
= 10ms sine pulse
T
J
= 25°C, anode supply 12V resistive load
V
mA
2
www.irf.com
10RIA Series
Bulletin I2405 rev. A 07/00
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DRM
≤
600V
V
DRM
≤
800V
V
DRM
≤
1000V
V
DRM
≤
1600V
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
200
180
160
150
0.9
4
µs
T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200µs, di/dt = -10A/µs
Typical turn-off time
110
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200µs, V
R
= 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
DRM
, gate bias 0V-100W
(*) t
q
= 10µsup to 600V, t
q
= 30µs up to 1600V available on special request.
A/µs
10RIA
Units
Conditions
T
J
= T
J
max., V
DM
= rated V
DRM
Gate pulse = 20V, 15Ω, t
p
= 6µs, t
r
= 0.1µs max.
I
TM
= (2x rated di/dt) A
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
10RIA
100
300 (*)
Units Conditions
V/µs
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 10RIA120S90.
Triggering
Parameter
P
GM
I
GM
-V
GM
I
GT
Maximum peak gate power
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak negative
gate voltage
DC gate current required
to trigger
90
60
35
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
3.0
2.0
1.0
2.0
0.2
V
V
mA
V
mA
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= T
J
max., V
DRM
= rated value
T
J
= T
J
max.
V
DRM
= rated value
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
10RIA
8.0
2.0
1.5
10
Units Conditions
W
A
V
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
www.irf.com
3
10RIA Series
Bulletin I2405 rev. A 07/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
10RIA
- 65 to 125
- 65 to 125
1.85
Units Conditions
°C
°C
K/W
DC operation
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque
to nut
0.35
K/W
Mounting surface, smooth, flat and greased
to device
25
0.29
2.8
lbf-in
kgf.m
Nm
g (oz)
See Outline Table
Lubricated threads
(Non-lubricated threads)
20(27.5)
0.23(0.32)
2.3(3.1)
wt
Approximate weight
Case style
14 (0.49)
TO-208AA (TO-48)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.44
0.53
0.68
1.01
1.71
0.32
0.56
0.75
1.05
1.73
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
10
1
RIA 120
2
3
M
4
S90
5
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M
= Stud base TO-208AA (TO-48) M6 X 1
5
-
Critical dv/dt: None = 300V/µs (Standard value)
S90
= 1000V/µs (Special selection)
4
www.irf.com
10RIA Series
Bulletin I2405 rev. A 07/00
Outline Table
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
80
70
60
50
40
0
2
4
10RIA Series
R
thJC
(DC) = 1.85 K/W
130
120
110
100
90
80
70
60
50
40
0
5
30°
10RIA Series
R
thJC
(DC) = 1.85 K/W
Conduction Angle
Conduction Period
30°
60°
90°
120°
180°
60°
90°
120°
180°
DC
10
15
20
25
30
6
8
10 12 14 16 18
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
www.irf.com
5
京公网安备 11010802033920号
EEWORLD
