|
BS170AMO |
BS170T/R |
| Description |
TRANSISTOR 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal |
TRANSISTOR 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal |
| Maker |
NXP |
NXP |
| package instruction |
CYLINDRICAL, O-PBCY-T3 |
CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code |
compli |
compliant |
| ECCN code |
EAR99 |
EAR99 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage |
60 V |
60 V |
| Maximum drain current (Abs) (ID) |
0.5 A |
0.5 A |
| Maximum drain current (ID) |
0.5 A |
0.5 A |
| Maximum drain-source on-resistance |
5 Ω |
5 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) |
10 pF |
10 pF |
| JEDEC-95 code |
TO-92 |
TO-92 |
| JESD-30 code |
O-PBCY-T3 |
O-PBCY-T3 |
| Number of components |
1 |
1 |
| Number of terminals |
3 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
ROUND |
ROUND |
| Package form |
CYLINDRICAL |
CYLINDRICAL |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
0.83 W |
0.83 W |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal location |
BOTTOM |
BOTTOM |
| transistor applications |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |