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1N5821USE3

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, HERMETIC SEALED, D5B, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size1MB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

1N5821USE3 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, HERMETIC SEALED, D5B, 2 PIN

1N5821USE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionHERMETIC SEALED, D5B, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.4 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
1N5820US – 1N5822US and 1N6864US
Qualified Levels*:
JAN, JANTX,
JANTXV and JANS
Available on
commercial
versions
3 Amp SQ-MELF Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/620
DESCRIPTION
This series of 3 amp Schottky rectifiers are compact in their square MELF packaging for high
density mounting. The 1N5822US and 1N6864US are military qualified for high-reliability
applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered surface mount equivalents of 1N5820 – 1N5822 and 1N6864 numbers.
Hermetically sealed.
Metallurgically bonded.
Double plug construction.
*JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/620 for
1N6822US and 1N6864US only.
(See
Part Nomenclature
for all available options.)
RoHS compliant devices available (commercial grade only on the 1N6822US and 1N6864US).
“B” SQ-MELF
(D-5B) Package
Also available in:
“B” Package
(axial-leaded)
1N5820 – 1N5822, 1N6864
APPLICATIONS / BENEFITS
Small size for high density mounting (see package illustration).
Non-sensitive to ESD per MIL-STD-750 method 1020.
MAXIMUM RATINGS
@ T
A
= +25 C unless otherwise noted.
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Thermal Resistance Junction-to-End Cap
o
Surge Peak Forward Current @ T
A
= +25 C
(Test pulse = 8.3 ms, half-sine wave.)
o (1)
Average Rectified Output Current @ T
EC
= +55 C
Symbol
T
J
T
STG
R
ӨJEC
I
FSM
I
O
Value
-65 to +125
-65 to +150
10
80
3
Unit
C
C
o
C/W
A
(pk)
o
o
o
A
NOTES:
1. See
Figures 3 and 4
for derating curves and for effects of V
R
on T
J
.
The maximum T
J
depends on the
voltage applied.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0303-1, Rev. 1 (6/14/13)
©2013 Microsemi Corporation
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