DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF1822-10
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Mar 12
2003 Feb 10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
Typical 2-tone performance at a supply voltage of 26 V
and I
DQ
of 85 mA:
– Output power = 10 W (PEP)
– Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
– Efficiency = 39% at 900 MHz, 34% at 2200 MHz
– dim =
−31
dBc at 900 MHz,
−28
dBc at 2200 MHz
•
Easy power control
•
Excellent ruggedness
•
High power gain
•
Excellent thermal stability
•
Designed for broadband operation (HF to 2200 MHz)
•
No internal matching for broadband operation.
1
BLF1822-10
PINNING - SOT467C
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
3
APPLICATIONS
•
RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the HF to 2200 MHz frequency range
•
Broadcast drivers.
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF
OPERATION
CW, class-AB (2-tone)
f
(MHz)
f
1
= 2200; f
2
= 2200.1
f
1
= 960; f
2
= 960.1
V
DS
(V)
26
26
I
DQ
(mA)
85
85
P
L
(W)
10 (PEP)
G
p
(dB)
2
Top view
MBK584
Fig.1 Simplified outline.
η
D
(%)
typ. 39
d
im
(dBc)
typ.
−33
10 (PEP) >11; typ. 13.5 >30; typ. 34
≤−26;
typ.
−28
typ. 18.5
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 10
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
PARAMETER
−
−
−
−65
−
MIN.
65
BLF1822-10
MAX.
V
V
A
°C
°C
±15
2.2
+150
200
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 0.2 mA
V
DS
= 10 V; I
D
= 20 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 0.75 A
V
GS
= 10 V; I
D
= 0.75 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
MIN.
65
4
−
2.8
−
−
−
−
−
−
TYP.
−
−
−
−
−
0.5
1.2
13
11
0.5
MAX.
−
5
1.5
−
40
−
−
−
−
−
UNIT
V
V
µA
A
nA
S
Ω
pF
pF
pF
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
mb
= 25
°C;
note 1
VALUE
5
0.5
UNIT
K/W
K/W
2003 Feb 10
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
APPLICATION INFORMATION 2.2 GHz
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th mb-h
= 0.4 K/W; unless otherwise specified.
MODE OF OPERATION
CW, class-AB (2-tone)
f
(MHz)
f
1
= 2200; f
2
= 2200.1
V
DS
(V)
26
I
DQ
(mA)
85
P
L
(W)
10 (PEP)
G
p
(dB)
>11
η
D
(%)
>30
d
im
(dBc)
≤−26
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 26 V; f = 2200 MHz at rated load power.
handbook, halfpage
10
2
MGW642
handbook, halfpage
15
MGW643
60
C
(pF)
10
Gp
Cos
Cis
(dB)
10
Gp
η
D
(%)
40
η
D
Crs
1
5
20
10
−1
0
10
20
VDS (V)
30
0
0
4
8
12
PL (PEP) (W)
0
16
V
GS
= 0; f = 1 MHz.
V
DS
= 26 V; I
DQ
= 85 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
Fig.2
Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
Fig.3
Power gain and efficiency as functions of
peak envelope load power; typical values.
2003 Feb 10
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
MGW644
handbook, halfpage
0
handbook, halfpage
15
MGW645
60
d im
(dBc)
−20
d3
d5
−40
d7
Gp
(dB)
10
Gp
η
D
(%)
40
η
D
5
−60
20
−80
0
4
8
12
PL (PEP) (W)
16
0
0
4
8
12
PL (PEP) (W)
0
16
V
DS
= 26 V; I
DQ
= 85 mA; T
h
≤
25
°C;
f
1
= 2000 MHz; f
2
= 2000.1 MHz.
V
DS
= 26 V; I
DQ
= 85 mA;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
Fig.4
Intermodulation distortion as a function of
peak envelope load power; typical values.
Fig.5
Power gain and efficiency as functions of
peak envelope load power; typical values.
MGW646
MGW647
handbook, halfpage
0
handbook, halfpage
0
d im
(dBc)
−20
d3
−40
d5
d7
d3
(dBc)
−20
−40
−60
(1)
(2)
(3)
−80
0
4
8
12
PL (PEP) (W)
16
−60
0
4
8
12
PL (PEP) (W)
16
V
DS
= 26 V; I
DQ
= 85 mA; T
h
≤
25
°C;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
V
DS
= 26 V; T
h
≤
25
°C;
f
1
= 2200 MHz; f
2
= 2200.1 MHz.
(1) I
DQ
= 115 mA.
(2) I
DQ
= 55 mA.
(3) I
DQ
= 85 mA.
Fig.6
Intermodulation distortion as a function of
peak envelope load power; typical values.
Fig.7
Intermodulation distortion as a function of
peak envelope load power; typical values.
2003 Feb 10
5
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