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U1ZB300-Z

Description
Zener Diode, 310V V(Z), 10%, 1W,
CategoryDiscrete semiconductor    diode   
File Size140KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

U1ZB300-Z Overview

Zener Diode, 310V V(Z), 10%, 1W,

U1ZB300-Z Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance5000 Ω
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation1 W
Nominal reference voltage310 V
surface mountYES
Maximum voltage tolerance10%
Working test current0.5 mA
Base Number Matches1
BL
FEATURES
power rating.
GALAXY ELECTRICAL
ZENER DIODES
U1ZB6.8
- - -
U1ZB390
POWER DISSIPATION:
1.0 W
Silicon planar power zener diodes
For use in stabilizing and clipping curcuits with high
(DO-214AC)SMA
Standard
zener
voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. Other
zener
voltage
and tolerances are available upon request.
MECHANICAL DATA
Case:DO-214AC
Terminals: Solderable per MIL-STD-202,
method
208
Polarity: Cathode
band
Marking: Type
number
Weight:
0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see
Table
"Characteristics")
VALUE
UNIT
Pow er dissipation at T
amb
=25
P
tot
T
J
T
s
1.0
1)
-40---+150
-40---+150
W
Junction temperature
Storage temperature
range
NOTES:
(1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
www.galaxycn.com
Document Number 0284025
BL
GALAXY ELECTRICAL
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