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M29W320EB90ZS1T

Description
Flash Memory
Categorystorage    storage   
File Size1MB,65 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M29W320EB90ZS1T Overview

Flash Memory

M29W320EB90ZS1T Parametric

Parameter NameAttribute value
Objectid110191496
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
M29W320ET
M29W320EB
32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)
3V supply Flash memory
Features
Supply voltage
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
– V
PP
=12V for Fast Program (optional)
Access times: 70, 90ns
Programming time
– 10μs per byte/word typical
– Double word/ Quadruple byte Program
Memory Blocks
– Memory Array: 63 Main Blocks
– 8 Parameter Blocks (Top or Bottom
Location)
Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
V
PP
/WP pin for fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security code
Extended memory Block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top Device code M29W320ET: 2256h
– Bottom Device code M29W320EB: 2257h
RoHS
®
packages available
FBGA
TSOP48 (N)
12 x 20 mm
BGA
TFBGA48 (ZE)
6 x 8 mm
FBGA64 (ZS)
11 x 13 mm
May 2009
Rev 9
1/65
www.numonyx.com
1

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