Doc No.
TT4-EA-11757
Revision.
2
Product Standards
Transistors with Built-in Resistor
DRC2144T0L
DRC2144T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2144T
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Unit: mm
2.9
0.4
3
0.16
1
2
1.5
2.8
1.1
(0.95)(0.95)
1.9
Marking Symbol: NP
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Topr
Tstg
Rating
50
50
100
200
150
-40 to +85
-55 to +150
Unit
V
V
mA
mW
°C
°C
°C
Internal Connection
B
R
1
C
E
Resistance
value
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat)
Vi(on)
Input voltage
Vi(off)
Input resistance
R1
Note)
R1
47
k
Conditions
IC = 10
μA,
IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 10 V, IC = 5 mA
IC = 10 mA, IB = 0.5 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 100
μA
Min
50
50
Typ
Max
0.1
0.5
0.01
460
0.25
0.4
+30%
Unit
V
V
μA
μA
mA
-
V
V
V
k
160
2.8
-30%
47
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1 of 3
Established : 2009-10-30
Revised
: 2014-03-07
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