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DN2450N8-G

Description
mosfet mosfet depletion mode 500v 10 ohms
CategoryDiscrete semiconductor    The transistor   
File Size562KB,4 Pages
ManufacturerSupertex
Environmental Compliance
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DN2450N8-G Overview

mosfet mosfet depletion mode 500v 10 ohms

DN2450N8-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSupertex
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW THRESHOLD
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain current (ID)0.23 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)0.9 A
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Supertex inc.
N-Channel Depletion-Mode
Vertical DMOS FETs
DN2450
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
Normally-on switches
Battery operated systems
Voltage to current converters
Constant current sources
Current limiters
Voltage limiters
Applications
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic of
all MOS structures, these devices are free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Device
DN2450
Package Options
TO-252 (D-PAK)
DN2450K4-G
SOT-89
DN2450N8-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
500
10
700
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Maximum junction temperature
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
150
O
C
SOURCE
GATE
SOURCE
DRAIN
GATE
TO-252 (D-PAK) (K4)
TO-243AA (SOT-89) (N8)
Product Marking
Si YYWW
DN2450
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
TO-252 (D-PAK) (K4)
DN4EW
Package may or may not include the following marks: Si or
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

DN2450N8-G Related Products

DN2450N8-G DN2450K4-G
Description mosfet mosfet depletion mode 500v 10 ohms mosfet mosfet depletion mode 500v 10 ohms

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