DRAM, 4KX8, 350ns, MOS, PDIP28
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1156942027 |
| package instruction | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 350 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T28 |
| JESD-609 code | e0 |
| memory density | 32768 bit |
| memory width | 8 |
| Number of terminals | 28 |
| word count | 4096 words |
| character code | 4000 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 4KX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| surface mount | NO |
| technology | MOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
京公网安备 11010802033920号
EEWORLD
