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FLM2023L-30F

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size111KB,5 Pages
ManufacturerSUMITOMO
Websitehttps://global-sei.com/
Download Datasheet Parametric View All

FLM2023L-30F Overview

Transistor

FLM2023L-30F Parametric

Parameter NameAttribute value
package instruction,
Contacts2
Reach Compliance Codeunknow
Base Number Matches1
FLM2023L-30F
L-Band Internally Matched FET
FEATURES
High Output Power: P1dB=45.0dBm(Typ.)
High Gain: G1dB=13.0dB(Typ.)
High PAE:
ηadd=43%(Typ.)
Broad Band: 2.025~2.285GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM2023L-30F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Ite m
Drain-Source Voltage
Gate -Source Voltage
Total Pow e r Dissipation
Storage Temperature
Channe l Te m perature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
107
-65 to +175
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Ite m
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Symbol
V
DS
I
GF
I
GR
Condition
R
G
=25 ohm
R
G
=25 ohm
Lim it
10
54
-17.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Ite m
Drain Current
Trans conductance
Pinch-off Voltage
Gate -Source Br e akdow n Voltage
Output Pow e r at 1dB G.C.P.
Pow e r Gain at 1dB G.C.P.
Drain Current
Pow e r -added Efficiency
Gain Flatne s s
3rd Order Inte r modulation
Distortion
Therm al Re s istance
Channe l Te m perature Rise
Symbol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
N
add
G
IM
3
R
th
T
ch
Condition
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=7.2A
V
DS
=5V , I
DS
=720mA
I
GS
=-720uA
V
DS
=10V
I
DS
DC=7.0A
f = 2.025
~
2.285 GHz
Zs=Z
L
=50 ohm
f =2.285 GHz
2-tone Test
f=5MHz
Pout=34.5dBm (S.C.L.)
Channel to Case
10V x I
dsr
X R
th
M in.
-
-
-1.0
-5.0
44.0
12.0
-
-
-
-44
-
-
Lim it
Typ.
-
6000
-2.0
-
45.0
13.0
7.0
43
-
-
1.2
-
Max.
16
-
-3.5
-
-
-
8.5
-
2.0
-
1.4
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
dBc
o
C/W
o
C
CASE STYLE : IK
ESD
Clas s III
2000V
~
Note : Based on EIA J ED-4701 C-111A (C=100pF, R=1.5k
)
Edition 1.1
July 2007
G.C.P.: Gain Compression Point
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