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RD48F4400P0VTQ0

Description
8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
Categorystorage    storage   
File Size1MB,102 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric View All

RD48F4400P0VTQ0 Overview

8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56

RD48F4400P0VTQ0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instruction8 X 11 MM, 1.20 MM HEIGHT, SCSP-88
Contacts88
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time88 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B88
JESD-609 codee0
length11 mm
memory density536870912 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8, 510
Number of terminals88
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA88,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply1.8,1.8/3.3 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size16K,64K
Maximum standby current0.000005 A
Maximum slew rate0.051 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitNO
typeNOR TYPE
width8 mm
Base Number Matches1
Intel StrataFlash
®
Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
Security
— 85/88 ns initial access
— One-Time Programmable Registers:
• 64 unique factory device identifier bits
— 40 MHz with zero wait states, 20 ns clock-to-
• 64 user-programmable OTP bits
data output synchronous-burst read mode
• Additional 2048 user-programmable OTP bits
— 25 ns asynchronous-page read mode
— Selectable OTP Space in Main Array:
— 4-, 8-, 16-, and continuous-word burst mode
• 4x32KB parameter blocks + 3x128KB main
— Buffered Enhanced Factory Programming
blocks (top or bottom configuration)
(BEFP) at 5 µs/byte (Typ)
— Absolute write protection: V
PP
= V
SS
— 1.8 V buffered programming at 7 µs/byte (Typ)
— Power-transition erase/program lockout
Architecture
— Individual zero-latency block locking
— Multi-Level Cell Technology: Highest Density
— Individual block lock-down
at Lowest Cost
Software
— Asymmetrically-blocked architecture
— 20 µs (Typ) program suspend
— Four 32-KByte parameter blocks: top or
— 20 µs (Typ) erase suspend
bottom configuration
— Intel
®
Flash Data Integrator optimized
— 128-KByte main blocks
— Basic Command Set and Extended Command
Voltage and Power
Set compatible
— V
CC
(core) voltage: 1.7 V – 2.0 V
— Common Flash Interface capable
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
Density and Packaging
— Standby current: 55 µA (Typ) for 256-Mbit
— 64/128/256-Mbit densities in 56-Lead TSOP
— 4-Word synchronous read current:
package
13 mA (Typ) at 40 MHz
— 64/128/256/512-Mbit densities in 64-Ball
Quality and Reliability
Intel
®
Easy BGA package
— Operating temperature: –40 °C to +85 °C
• 1-Gbit in SCSP is –30 °C to +85 °C
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel
®
QUAD+ SCSP
— Minimum 100,000 erase cycles per block
— 16-bit wide data bus
— ETOX™ VIII process technology (130 nm)
High performance
The Intel StrataFlash
®
Embedded Memory (P30) product is the latest generation of Intel
StrataFlash
®
memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel
®
130 nm ETOX™ VIII process technology.
Order Number: 306666, Revision: 001
April 2005
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