K9F4G08U1M-ICB0 datasheet, PDF

K9F4G08U1M-ICB0: DescriptionFlash, 512MX8, 25ns, PBGA52; Categorystorage storage; File Size1MB，43 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K9F4G08U1M-ICB0 Overview

Flash, 512MX8, 25ns, PBGA52

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1122329159
package instruction	LGA, LGA52(UNSPEC)
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	25 ns
command user interface	YES
Data polling	NO
memory density	4294967296 bit
Memory IC Type	FLASH
memory width	8
Humidity sensitivity level	1
Number of departments/size	4K
Number of terminals	52
word count	536870912 words
character code	512000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512MX8
Package body material	PLASTIC/EPOXY
encapsulated code	LGA
Encapsulate equivalent code	LGA52(UNSPEC)
Package form	GRID ARRAY
page size	2K words
Parallel/Serial	PARALLEL
power supply	3/3.3 V
Certification status	Not Qualified
ready/busy	YES
Department size	128K
Maximum standby current	0.00005 A
Maximum slew rate	0.03 mA
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal location	BOTTOM
switch bit	NO

K9K8G08U1M

K9F4G08U0M

FLASH MEMORY

K9XXG08UXM

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2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

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