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RBV-1506

Description
15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,2 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric Compare View All

RBV-1506 Overview

15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

RBV-1506 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PSFM-T4
Contacts4
Reach Compliance Codeunknow
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSFM-T4
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Bridge Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
With Heatsink
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
F
(V)
max per
I
F
element
(A)
I
R
(µA)
V
R
= V
RM
I
R
(H)
(µA)
V
R
=V
RM,
Tj=100°C
Rth ( j-c)
(°C/ W)
Others
Mass
Fig.
(g)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
max per element max per element
RBV-1306
RBV-1506S
600
13
80
150
1.2
1.1
–40 to +150
6.5
10
100
15
200
25
350
7.5
200
1.05
50
12.5
1.5
6.45
A
RBV-1506
RBV-2506
RBV-1306
Tc—I
F(AV)
Derating
14
Average Forward Current I
F (AV)
(A)
Forward Power Loss P
f
(W)
I
F(AV)
—P
f
Characteristics
50
I
FSM
(A)
80
I
FMS
Rating
I
FSM
(A)
Tj = 150°C
12
10
t /T= 1/ 3, Sinewave
t /T = 1/2
D.C.
40
8
6
4
2
0
30
t /T= 1/ 3, Sinewave
t /T = 1/2
D.C.
Peak Forward Surge Current
t
T
20ms
60
40
20
20
10
20
40
60
80 100 120 140
Case Temperature Tc
(°C)
160
0
2
4
6
8
10
12 14
Average Forward Current I
F (AV)
(A)
0
1
5
10
Overcurrent Cycles
50
RBV-1506S
Tc—I
F(AV)
Derating
15
Average Forward Current I
F (AV)
(A)
I
F(AV)
—P
f
Characteristics
I
FSM
(A)
I
FMS
Rating
150
I
FSM
(A)
t /T = 1/2
Forward Power Loss P
f
(W)
50
Tj = 150°C
t
T
t /T= 1/ 3, Sinewave
t /T
=
1/ 3,
Sinewave
12
t /T = 1/6
9
D.C.
40
20ms
t /T = 1/6
30
Peak Forward Surge Current
100
6
20
t /T = 1/2
10
D.C.
50
3
0
0
20
40 60 80 100 120 140 160
Case Temperature Tc
(°C)
0
0
2
4
6
8 10 12 14 16
Average Forward Current I
F (AV)
(A)
0
1
5
10
Overcurrent Cycles
50
RBV-1506
Tc—I
F(AV)
Derating
15
Average Forward Current I
F (AV)
(A)
I
F(AV)
—P
f
Characteristics
I
FSM
(A)
Forward Power Loss P
f
(W)
12
t /T =1/ 3, Sinewave
t /T = 1/6
D.C.
40
t
T
t /T
=
1/ 3,
Sinewave
t /T = 1/6
I
FSM
(A)
t /T = 1/2
50
200
I
FMS
Rating
Tj = 150°C
20ms
150
9
30
Peak Forward Surge Current
100
6
20
t /T = 1/2
3
10
D.C.
50
0
0
20
40 60 80 100 120 140 160
Case Temperature Tc
(°C)
0
0
2
4
6
8 10 12 14 16
Average Forward Current I
F (AV)
(A)
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
C3
30
3.2
±0.1
4.6
3.6
+
4-1.0
10
11
13
0.7
17.5
20.0
7.5 7.5
2.7
+
22

RBV-1506 Related Products

RBV-1506 RBV-2506 RBV-1506S RBV-1306
Description 15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 13 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
package instruction R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Contacts 4 4 4 4
Reach Compliance Code unknow unknow unknow unknow
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Maximum non-repetitive peak forward current 200 A 350 A 150 A 80 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum output current 15 A 25 A 15 A 13 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 600 V 600 V 600 V
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Is it Rohs certified? incompatible incompatible incompatible -
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V -
JESD-609 code e0 e0 e0 -
Maximum operating temperature 150 °C 150 °C 150 °C -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Base Number Matches 1 - 1 1
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