RBV-1506S datasheet, PDF - EEWORLD Datasheet

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RBV-1506S: Description15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size22KB，2 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/

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RBV-1506S Overview

15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

RBV-1506S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SANKEN
package instruction	R-PSFM-T4
Contacts	4
Reach Compliance Code	unknow
Is Samacsys	N
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PSFM-T4
JESD-609 code	e0
Maximum non-repetitive peak forward current	150 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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Bridge Diodes

Absolute Maximum Ratings

Parameter

Type No.

V

RM

(V)

I

F (AV)

(A)

With Heatsink

Electrical Characteristics (Ta = 25°C)

Tstg

(°C)

V

F

(V)

max per

I

F

element

(A)

I

R

(µA)

V

R

= V

RM

I

R

(H)

(µA)

V

R

=V

RM,

Tj=100°C

Rth ( j-c)

(°C/ W)

Others

Mass

Fig.

(g)

I

FSM

(A)

50Hz

Half-cycle Sinewave

Single Shot

Tj

(°C)

max per element max per element

RBV-1306

RBV-1506S

600

13

80

150

1.2

1.1

–40 to +150

6.5

10

100

15

200

25

350

7.5

200

1.05

50

12.5

1.5

6.45

A

RBV-1506

RBV-2506

RBV-1306

Tc—I

F(AV)

Derating

14

Average Forward Current I

F (AV)

(A)

Forward Power Loss P

f

(W)

I

F(AV)

—P

f

Characteristics

50

I

FSM

(A)

80

I

FMS

Rating

I

FSM

(A)

Tj = 150°C

12

10

t /T= 1/ 3, Sinewave

t /T = 1/2

D.C.

40

8

6

4

2

0

30

t /T= 1/ 3, Sinewave

t /T = 1/2

D.C.

Peak Forward Surge Current

t

T

20ms

60

40

20

10

20

40

60

80 100 120 140

Case Temperature Tc

(°C)

160

0

2

4

6

8

10

12 14

Average Forward Current I

F (AV)

(A)

0

1

5

10

Overcurrent Cycles

50

RBV-1506S

Tc—I

F(AV)

Derating

15

Average Forward Current I

F (AV)

(A)

I

F(AV)

—P

f

Characteristics

I

FSM

(A)

I

FMS

Rating

150

I

FSM

(A)

t /T = 1/2

Forward Power Loss P

f

(W)

50

Tj = 150°C

t

T

t /T= 1/ 3, Sinewave

t /T

=

1/ 3,

Sinewave

12

t /T = 1/6

9

D.C.

40

20ms

t /T = 1/6

30

Peak Forward Surge Current

100

6

20

t /T = 1/2

10

D.C.

50

3

0

20

40 60 80 100 120 140 160

Case Temperature Tc

(°C)

0

2

4

6

8 10 12 14 16

Average Forward Current I

F (AV)

(A)

0

1

5

10

Overcurrent Cycles

50

RBV-1506

Tc—I

F(AV)

Derating

15

Average Forward Current I

F (AV)

(A)

I

F(AV)

—P

f

Characteristics

I

FSM

(A)

Forward Power Loss P

f

(W)

12

t /T =1/ 3, Sinewave

t /T = 1/6

D.C.

40

t

T

t /T

=

1/ 3,

Sinewave

t /T = 1/6

I

FSM

(A)

t /T = 1/2

50

200

I

FMS

Rating

Tj = 150°C

20ms

150

9

30

Peak Forward Surge Current

100

6

20

t /T = 1/2

3

10

D.C.

50

0

20

40 60 80 100 120 140 160

Case Temperature Tc

(°C)

0

2

4

6

8 10 12 14 16

Average Forward Current I

F (AV)

(A)

0

1

5

10

Overcurrent Cycles

50

External Dimensions

(Unit: mm)

Flammability:

UL94V-0 or Equivalent

Fig.

A

C3

30

3.2

±0.1

4.6

3.6

+

4-1.0

10

–

11

13

0.7

17.5

20.0

7.5 7.5

2.7

+

–

22

RBV-1506S Related Products

	RBV-1506S	RBV-2506	RBV-1506	RBV-1306
Description	15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	15 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	13 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
package instruction	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Contacts	4	4	4	4
Reach Compliance Code	unknow	unknow	unknow	unknow
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Maximum non-repetitive peak forward current	150 A	350 A	200 A	80 A
Number of components	4	4	4	4
Phase	1	1	1	1
Number of terminals	4	4	4	4
Maximum output current	15 A	25 A	15 A	13 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	600 V	600 V	600 V
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Is it Rohs certified?	incompatible	incompatible	incompatible	-
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	-
JESD-609 code	e0	e0	e0	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Base Number Matches	1	-	1	1

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