RB751S-40 / RB751V-40
Diodes
Schottky barrier diode
RB751S-40 / RB751V-40
!Applications
High speed switching
For Detection
!
External dimensions
(Units : mm)
RB751S-40
CATHODE MARK
!
Features
1) Small surface mounting type.
(EMD2, UMD2)
2) Low reverse current and low
forward voltage.
3) High reliability.
1.2±0.05
1.6±0.1
5
0.3±0.05
0.8±0.05
0.12±0.05
0.6±0.1
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
RB751V-40
CATHODE MARK
CATHODE MARK
!
Construction
Silicon epitaxial planar
2.5±0.2
1.7±0.1
2.5±0.2
1.7±0.1
5
0.3±0.05
1.25±0.1
0.1
+0.1
−0.05
5
0.3±0.05
1.25±0.1
0.1
+0.1
−0.05
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
0.7
+0.2
−0.1
0.7
+0.2
−0.1
∗
There are two different markings.
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
*
Junction temperature
Storage temperature
* 60 Hz for 1
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
40
30
30
200
125
−40~+125
Unit
V
V
mA
mA
˚C
˚C
!
Electrical characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Note) ESD sensitive product handling required.
Symbol
V
F
I
R
C
T
Min.
−
−
−
Typ.
−
−
2.0
Max.
0.37
0.5
−
Unit
V
µA
pF
I
F
= 1mA
V
R
= 30V
Conditions
V
R
= 1V, f = 1MHz
RB751S-40 / RB751V-40
Diodes
!
Electrical characteristic curves
(Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
1000m
Typ.
pulse measurement
REVERSE CURRENT : I
R
(A)
FORWARD CURRENT : I
F
(A)
100µ
Ta = 125˚C
10µ
Ta = 75˚C
100
50
Ta = 25˚C
f = 1MHz
100m
10m
1m
100µ
10µ
1µ
0
=1
25
˚C
20
10
5
1µ
Ta = 25˚C
100n
Ta = -25˚C
Typ.
pulse measurement
5
10
15
20
25
30
35
REVERSE VOLTAGE : V
R
(V)
Ta = 75˚C
Ta
Ta = 25˚C
Ta = -25˚C
10n
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1n
0
2
4
6
8
10
12
14
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between
terminals characteristics
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