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RB751S-40

Description
0.03 A, 40 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB751S-40 Overview

0.03 A, 40 V, SILICON, SIGNAL DIODE

RB751S-40 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-79
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.37 V
JESD-30 codeR-PDSO-F2
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.2 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
RB751S-40 / RB751V-40
Diodes
Schottky barrier diode
RB751S-40 / RB751V-40
!Applications
High speed switching
For Detection
!
External dimensions
(Units : mm)
RB751S-40
CATHODE MARK
!
Features
1) Small surface mounting type.
(EMD2, UMD2)
2) Low reverse current and low
forward voltage.
3) High reliability.
1.2±0.05
1.6±0.1
5
0.3±0.05
0.8±0.05
0.12±0.05
0.6±0.1
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
RB751V-40
CATHODE MARK
CATHODE MARK
!
Construction
Silicon epitaxial planar
2.5±0.2
1.7±0.1
2.5±0.2
1.7±0.1
5
0.3±0.05
1.25±0.1
0.1
+0.1
−0.05
5
0.3±0.05
1.25±0.1
0.1
+0.1
−0.05
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
0.7
+0.2
−0.1
0.7
+0.2
−0.1
There are two different markings.
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
*
Junction temperature
Storage temperature
* 60 Hz for 1
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
40
30
30
200
125
−40~+125
Unit
V
V
mA
mA
˚C
˚C
!
Electrical characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Note) ESD sensitive product handling required.
Symbol
V
F
I
R
C
T
Min.
Typ.
2.0
Max.
0.37
0.5
Unit
V
µA
pF
I
F
= 1mA
V
R
= 30V
Conditions
V
R
= 1V, f = 1MHz

RB751S-40 Related Products

RB751S-40 RB751V-40 RB751
Description 0.03 A, 40 V, SILICON, SIGNAL DIODE 0.3 A, 40 V, SILICON, SIGNAL DIODE 0.3 A, 40 V, SILICON, SIGNAL DIODE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE SIGNAL DIODE
Number of components 1 1 1
Number of terminals 2 2 2
Maximum repetitive peak reverse voltage 40 V 40 V 40 V
surface mount YES YES Yes
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Is it lead-free? Lead free Lead free -
Is it Rohs certified? conform to conform to -
Parts packaging code SC-79 SC-90A -
package instruction R-PDSO-F2 R-PDSO-F2 -
Contacts 2 2 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Other features HIGH RELIABILITY HIGH RELIABILITY -
Configuration SINGLE SINGLE -
Maximum forward voltage (VF) 0.37 V 0.37 V -
JESD-30 code R-PDSO-F2 R-PDSO-F2 -
JESD-609 code e1 e1 -
Maximum non-repetitive peak forward current 0.2 A 0.2 A -
Maximum operating temperature 125 °C 125 °C -
Maximum output current 0.03 A 0.03 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 260 -
Certification status Not Qualified Not Qualified -
technology SCHOTTKY SCHOTTKY -
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) -
Maximum time at peak reflow temperature 10 10 -
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