Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
saturation voltage
・Wide
safe operating area
・High
dissipation capability
APPLICATIONS
・Series
and shunt regulators
・High
fidelity amplifiers
・Power
switching circuits
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6253
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
55
45
5
15
7
115
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.5
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=3A ;I
B
=0.3A
I
C
=15A ;I
B
=5A
I
C
=3A ; V
CE
=4V
V
CE
=25V; I
B
=0
V
CE
=55V; V
BE
=-1.5V
V
CE
=50V; V
BE
=-1.5V T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=4V
I
C
=15A ; V
CE
=4V
20
3
MIN
45
TYP.
2N6253
MAX
UNIT
V
1.0
4.0
1.7
1.5
2.0
10.0
10
70
V
V
V
mA
mA
mA
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6253
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic
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