2N4859UBE3 datasheet, PDF - EEWORLD Datasheet

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2N4859UBE3: DescriptionSmall Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET; CategoryDiscrete semiconductor The transistor; File Size50KB，2 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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2N4859UBE3 Overview

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET

2N4859UBE3 Parametric

Parameter Name	Attribute value
Objectid	4019130938
package instruction	SURFACE MOUNT PACKAGE-3
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	6.52
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain-source on-resistance	25 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	8 pF
JESD-30 code	R-CDSO-N3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Transistor component materials	SILICON

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TECHNICAL DATA

N-CHANNEL J-FET

Qualified per MIL-PRF-19500/385

Devices

Qualified

Level

JAN

JANTX

JANTXV

2N4856

2N4857

2N4858

2N4859

2N4860

2N4861

2N4856UB 2N4857UB 2N4858UB 2N4859UB 2N4860UB 2N4861UB

ABSOLUTE MAXIMUM RATINGS (T

C

= +25

0

C unless otherwise noted)

2N4856 2N4859

Parameters / Test Conditions

Symbol 2N4857 2N4860

2N4858 2N4861

Gate-Source Voltage

V

GS

-40

-30

Drain-Source Voltage

V

DS

40

30

Drain-Gate Voltage

V

DG

40

30

Gate Current

I

G

50

Power Dissipation

T

A

= +25

0

C

(1)

P

T

0.36

0 (2)

T

C

= +25 C

1.8

Operating Junction & Storage Temperature Range

T

j

, T

stg

-65 to +200

0

(1) Derate linearly 2.06 mW/ C for T

A

> 25 C.

(2) Derate linearly 10.3 mW/

0

C for T

C

> 25

0

C.

Unit

V

mA

W

0

C

TO-18*

(TO-206AA)

Surface Mount

(UB version)

*See appendix A

for package

outline

ELECTRICAL CHARACTERISTICS (T

C

= 25

0

C unless otherwise noted)

Parameters / Test Conditions

Symbol

Gate-Source Breakdown Voltage

V

DS

= 0, I

G

= 1.0

µAdc

2N4856, 2N4857, 2N4858

V

(BR)GSS

2N4859, 2N4860, 2N4861

Min.

-40

-30

-4.0

-2.0

-0.8

Max.

Units

Vdc

Gate-Source “Off” State Voltage

V

DS

= 15 Vdc, I

D

= 0.5

ηAdc

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

2N4856, 2N4857, 2N4858

2N4859, 2N4860, 2N4861

V

GS(on)

-10

-6.0

-4.0

-0.25

0.25

Vdc

Gate Reverse Current

V

DS

= 0, V

GS

= -20 Vdc

V

DS

= 0, V

GS

= -15 Vdc

Drain Current

V

GS

= -10 Vds, V

DS

= 15 Vdc

I

GSS

I

D(off)

ηA

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

022802

Page 1 of 2

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