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UM2310R

Description
Pin Diode, 1000V V(BR), Silicon
CategoryDiscrete semiconductor    diode   
File Size181KB,5 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

UM2310R Overview

Pin Diode, 1000V V(BR), Silicon

UM2310R Parametric

Parameter NameAttribute value
Objectid4016603336
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL7.72
Other featuresLOW DISTORTION
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage1000 V
Shell connectionCATHODE
ConfigurationSINGLE
Maximum diode capacitance20 pF
Nominal diode capacitance15 pF
Diode component materialsSILICON
Maximum diode forward resistance0.4 Ω
Diode resistance test current100 mA
Diode resistance test frequency1 MHz
Diode typePIN DIODE
frequency bandMEDIUM FREQUENCY
JESD-30 codeS-XSSO-G1
Minority carrier nominal lifetime80 µs
Number of components1
Number of terminals1
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formSMALL OUTLINE
Certification statusNot Qualified
Reverse test voltage100 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationSINGLE

UM2310R Preview

UM2300
Features
LF band (100 KHz) PIN
Long Lifetime (80
µs
typ.)
High Power (1 KW CW),
High Isolation (35 dB)
Low Loss (0.2 dB),
Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
PIN DIODE
SWITCH
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80
µS
typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘off ’state).
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘ 0 dB ’ attenuator state.
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1 MHz
2 MHz
4 MHz
200 KHz
100 KHz
Ct (pF)
400 KHz
20
40
60
80
100
120
140
160
180
200
Vr (VOLTS)
Voltage Ratings (25°C)
Reverse Voltage ( V
R
)
@ I
R
= 10
µA
100
200
400
600
800
1000
Max.
0.4
20
10
Units
pF
µA
µs
dBm
DEVICE
Electrical Specifications (25°C)
Test
Diode Resistance R
S
Capacitance C
T
Reverse Current I
R
Carrier Lifetime
τ
IP3
Min.
Typ.
0.3
15
80
60
VOLTS............ UM2301
VOLTS............ UM2302
VOLTS............ UM2304
VOLTS............ UM2306
VOLTS............ UM2308
VOLTS............ UM2310
Conditions
F
1
= 1 MHz, 100 mA
F
2
= 1 MHz, 100 V
@ Rated Voltage
I
f
= 10 mA / 100 V
2 WATT total, I
f
=25 mA
F
1
=0.999 MHz, F
2
=1.001 MHz
1.0 WATT/ tone
25°C Stud Temperature
60
50
Thermal Resistance
1.0
°C
/ W
MSCOXXXA
10-26-04
>(34989)
DSW UM2300 <A
UM2300
TYPICAL I-V CURVE
10
10
10
2
1
0
-2
10
TYPICAL IR vs VR
150 oC
-3
10
125 oC
100 oC
If [AMPERES]
10
10
10
10
10
10
IR (A) (MEAN)
-1
-2
-3
-4
-5
-6
0.0
150 oC
125 oC
100 oC
75 oC
50 oC
25 oC
-4
10
-5
10
-6
10
-7
10
-8
10
75 oC
50 oC
25 oC
0.2
0.4
0.6
0.8 1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
100 200 300 400 500 600 700 800 900 1000
Vf [VOLTS]
VR (Volts)
TYPICAL RS vs FORWARD BIAS CURRENT
1000
TYPICAL Rp vs REVERSE VOLTAGE
9
10
8
10
10KHz
20KHz
40KHz
100KHz
200KHz
6
10
5
10
400KHz
1MHz
2MHz
4MHz
10MHz
100
7
10
Rs (Ohms)
10
1
Rp (OHMS)
.01
.1
1
10
100
4
10
.1
3
10
If (mA)
0
10
1
10
REVERSE VOLTAGE (VOLTS)
2
10
MSCOXXXA 11-10-04
>(34989)
DSW UM2300 <a
UM2300
TYPICAL THERMAL IMPEDANCE
10
0.0
-0.5
TYPICAL TCVf vs If
THERMAL IMPEDANCE - (C/W)
DELTA
125 oC
No Heatsink
TCVf [mV/oC]
1
-1.0
-1.5
-2.0
-2.5
-3.0
With Heatsink
.1
.01
1
10
100
1000
10
-3
10
-2
Pt - PULSE TIME - (ms)
-1
10
If [AMPERES]
10
0
10
1
TYPICAL POWER LEVEL vs FORWARD BIAS CURRENT
40
f1 = F +/- 1 KHz
f2 = F +/- 1 KHz
70
POWER LEVEL/TONE (dBm)
35
500KHz 250KHz 150KHz
65
25
55
20
50
TAU = 0.1 ms
15
1
2
3
4
5
6
7 8
10
45
If NEEDED TO OBTAIN AN IM3 OF - 60 dBc (mA)
MSCOXXXA 11-10-04
>(34989)
IP3 (dBm)
30
60
DSW UM2300 <A
UM2300
UM2300
MSCOXXXA 11-10-04
>(34989)
DSW UM2300 <A
UM2300
UM2300S
MSCOXXXA 11-10-04
>(34989)
DSW UM2300 <A
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