EEWORLDEEWORLDEEWORLD

Part Number

Search

IRFPS29N60L

Description
SMPS MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size168KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRFPS29N60L Online Shopping

Suppliers Part Number Price MOQ In stock  
IRFPS29N60L - - View Buy Now

IRFPS29N60L Overview

SMPS MOSFET

IRFPS29N60L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-274AA
package instructionIN-LINE, R-PSIP-X3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)570 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)29 A
Maximum drain current (ID)29 A
Maximum drain-source on-resistance0.21 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-274AA
JESD-30 codeR-PSIP-X3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)480 W
Maximum pulsed drain current (IDM)110 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formUNSPECIFIED
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94622A
SMPS MOSFET
IRFPS29N60L
HEXFET
®
Power MOSFET
Applications
Zero Voltage Switching SMPS
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
Telecom and Server Power Supplies
Uninterruptible Power Supplies
175mΩ
600V
130ns 29A
Motor Control applications
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity
.
Super-247™
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Max.
29
18
110
480
3.8
±30
15
-55 to + 150
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
W
W/°C
V
V/ns
°C
Units
A
™
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
240
630
9.4
29
A
110
1.5
190
360
950
14
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 29A, V
GS
= 0V
Ã
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
f
ns T
J
= 25°C, I
F
= 29A
T
J
= 125°C, di/dt = 100A/µs
nC
A
J
J
––– 1820 2720
f
T = 25°C, I = 29A, V = 0V
f
T = 125°C, di/dt = 100A/µs
f
S
GS
T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
8/26/04
Factors to consider when choosing a DSP chip
1. DSP chip operation speed MAC time: the time for one multiplication and one addition. Most DSP chips can complete one multiplication and one addition operation in one instruction cycle. FFT executio...
Aguilera DSP and ARM Processors
Why does Apple use UWB technology? Learn more about UWB here
[i=s]This post was last edited by Shi Liu Jie on 2020-11-24 11:08[/i]Why does Apple use UWB technology? Learn more about UWB here UWB may never have thought that it would become well-known to the worl...
石榴姐 RF/Wirelessly
【R7F0C809】@fxyc87, Lecture 1, Getting Started Environment
Unboxing, see picture,The board is relatively large, everyone says soThe downloader is still small. The mainboard looks like it was hand-soldered, not machine-soldered. There is also a rosin button on...
fxyc87 Renesas Electronics MCUs
Use C# MSComm control to control the level of pins 4 and 7 of the serial port, urgent.
I use C# MSComm control to program the lower computer communication, and need to control the serial port 4,7 level. How to program it? Thank you. (I know how to use the circuit, it is easy in 8051, bu...
helyboy_1999 Embedded System
Application of Nortel GSM-R in the Construction of Qinghai-Tibet Railway
The Ministry of Railways of China is the manager and operator of China's railway transportation and an important part of the national government. In 2002, after long-term and repeated demonstrations, ...
shuiping RF/Wirelessly
How to use LOTO oscilloscope to draw frequency response characteristic curve?
In work and projects, we often encounter a functional circuit module to condition the signal, or filter, or amplify, or attenuate, or transform impedance. These functional circuit modules may be passi...
LOTO2018 Test/Measurement

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1932  1472  1688  1612  807  39  30  34  33  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号