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IRG4PC60F

Description
INSULATED GATE BIPOLAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size274KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRG4PC60F Overview

INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC60F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-247AC
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codecompli
Other featuresFAST
Shell connectionCOLLECTOR
Maximum collector current (IC)90 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum6 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)520 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)770 ns
Nominal on time (ton)105 ns
Base Number Matches1
PD - 95566A
IRG4PC60FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
• Lead-Free
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on)
typ.
=
1.50V
@V
GE
= 15V, I
C
= 60A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed for best performance when used with
IR Hexfred & IR Fred companion diodes.
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
90
60
360
360
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.24
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
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