UNISONIC TECHNOLOGIES CO., LTD
MJE13003-V
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
NPN SILICON TRANSISTOR
FEATURES
* Reverse biased SOA with inductive load @ T
C
=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical t
C
= 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
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Copyright © 2014 Unisonic Technologies Co., Ltd
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ORDERING INFORMATION
Ordering Number
Lead Free
MJE13003L-V-x-TA3-T
MJE13003L-V-x-TM3-T
MJE13003L-V-x-TMS-T
MJE13003L-V-x-TN3-R
MJE13003L-V-x-T60-F-K
MJE13003L-V-x-T6C-A-K
MJE13003L-V-x-T6C-F-K
MJE13003L-V-x-T6S-F-K
MJE13003L-V-x-T92-A-B
MJE13003L-V-x-T92-A-K
MJE13003L-V-x-T92-F-B
MJE13003L-V-x-T92-F-K
MJE13003L-V-x-T9N-B
MJE13003L-V-x-T9N-K
Halogen-Free
MJE13003G-V-x-TA3-T
MJE13003G-V-x-TM3-T
MJE13003G-V-x-TMS-T
MJE13003G-V-x-TN3-R
MJE13003G-V-x-T60-F-K
MJE13003G-V-x-T6C-A-K
MJE13003G-V-x-T6C-F-K
MJE13003G-V-x-T6S-F-K
MJE13003G-V-x-T92-A-B
MJE13003G-V-x-T92-A-K
MJE13003G-V-x-T92-F-B
MJE13003G-V-x-T92-F-K
MJE13003G-V-x-T9N-B
MJE13003G-V-x- T9N-K
NPN SILICON TRANSISTOR
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
E
C
B
B
C
E
B
C
E
E
C
B
E
C
B
B
C
E
B
C
E
E
C
B
E
C
B
Package
TO-220
TO-251
TO-251S
TO-252
TO-126
TO-126C
TO-126C
TO-126S
TO-92
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
Packing
Tube
Tube
Tube
Tape Reel
Bulk
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
MARKING
TO-220/TO-251/TO-251S/TO-252
TO-126/TO-126C/TO-126S
TO-92
TO-92NL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ABSOLUTE MAXIMUM RATINGS
NPN SILICON TRANSISTOR
UNIT
V
V
V
A
A
A
W
W
W
W
W
W
W
W
°C
°C
PARAMETER
SYMBOL
RATINGS
Collector-Emitter Voltage
V
CEO(SUS)
400
Collector-Base Voltage
V
CBO
700
Emitter Base Voltage
V
EBO
9
Continuous
I
C
1.5
Collector Current
Peak (1)
I
CM
3
Continuous
I
B
0.75
Base Current
Peak (1)
I
BM
1.5
Continuous
I
E
2.25
Emitter Current
Peak (1)
I
EM
4.5
TO-126/TO-126C
1.4
TO-126S
TO-92/TO-92NL
1.1
T
A
=25°C
TO-220
2
TO-251/TO-251S
1.56
TO-252
P
D
Power Dissipation
TO-126/TO-126C
20
TO-126S
TO-92/TO-92NL
1.5
T
C
=25°C
TO-220
40
TO-251/TO-251S
25
TO-252
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-034.a
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PARAMETER
OFF CHARACTERISTICS
(Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
T
C
=25°C
T
C
=100°C
SYMBOL
V
CEO(SUS)
I
CEO
I
EBO
Is/b
RB
SOA
h
FE1
h
FE2
V
CE(SAT)
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
TEST CONDITIONS
I
C
=10mA , I
B
=0
V
CEO
=Rated Value,
V
BE(OFF)
=1.5 V
V
EB
=9V, I
C
=0
MIN TYP MAX UNIT
400
1
5
1
See Fig.5
See Fig.6
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=100mA, V
CE
=10V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
14
5
57
30
0.5
1
3
1
1
1.2
1.1
10
21
V
mA
mA
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS
(Note)
DC Current Gain
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test: PW=300μs, Duty Cycle≤2%
V
BE(SAT)
V
f
T
C
OB
4
MHz
pF
t
D
t
R
t
S
t
F
t
STG
t
C
t
F
V
CC
=125V, I
C
=1A,
I
B1
=I
B2
=0.2A, t
P
=25μs, Duty
Cycle≤1%
0.05 0.1
0.8
1
1.2
4
0.75 1.00
1.7
4
0.29 0.75
0.15
μs
μs
μs
μs
μs
μs
μs
I
C
=1A, V
CLAMP
=300V, I
B1
=0.2A,
V
BE(OFF)
=5V
DC
, T
C
=100°C
CLASSIFICATION OF h
FE1
RANK
RANGE
A
14 ~ 22
B
21 ~ 27
C
26 ~ 32
D
31 ~ 37
E
36 ~ 42
F
41 ~ 47
G
46 ~ 52
H
51 ~ 57
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www.unisonic.com.tw
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APPLICATION INFORMATION
NPN SILICON TRANSISTOR
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
Resistive
Switching
+125V
Test Circuits
Rc
TUT
R
B
D1
-4.0V
SCOPE
Circuit Values
Coil Data :
V
CC
=20V
Ferroxcube core #6656
V
CLAMP
=300V
Full Bobbin ( ~ 200 Turns) #20
GAP for 30 mH/2 A
L
COIL
=50mH
V
CC
=125V
R
C
=125Ω
D1=1N5820 or
Equiv.
R
C
=47Ω
Output Waveforms
Test Waveforms
+10.3 V
25μS
0
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
R
B
and Rc adjusted
for desired I
B
and Ic
Table 2. Typical Inductive Switching Performance
Ic
(A)
Tc
(°C)
t
sv
(μs)
t
RV
(μs)
t
FI
(μs)
t
TI
(μs)
tc
(μs)
I
C
I
CPK
90% V
clamp
t
sv
t
RV
t
c
V
CLAMP
90% Ic
t
FI
t
TI
0.5
25
100
25
100
25
100
1.3
1.6
1.5
1.7
1.8
3
0.23 0.30
0.26 0.30
0.10
0.13
0.35 0.30
0.40 0.36
1
0.14 0.05 0.16
0.26 0.06 0.29
V
CE
I
B
90% I
B1
10% V
CLAMP
10%
I
CPK
2% Ic
1.5
0.07 0.10 0.05 0.16
0.08 0.22 0.08 0.28
Time
Fig.1 Inductive Switching Measurements
Note: All Data Recorded in the Inductive Switching
Circuit in Table 1
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www.unisonic.com.tw
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QW-R204-034.a
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