PD - 95617
IRGB5B120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 Package.
• Lead-Free
C
V
CES
= 1200V
I
C
= 6.0A, T
C
=100°C
G
E
t
sc
> 10µs, T
J
=150°C
n-channel
V
CE(on)
typ. = 2.75V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
12
6.0
24
24
12
6.0
24
± 20
89
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
1.4
2.8
–––
62
–––
Units
°C/W
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g (oz)
1
8/2/04
IRGB5B120KDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆
V
GE(th)
/
∆
T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage 1200 –––
Temperature Coeff. of Breakdown Voltage ––– 1.15
Collector-to-Emitter Saturation Voltage ––– 2.75
––– 3.36
Gate Threshold Voltage
4.0 5.0
Temperature Coeff. of Threshold Voltage ––– -11
Forward Transconductance
––– 2.6
Zero Gate Voltage Collector Current
––– –––
––– 66
Diode Forward Voltage Drop
––– 2.13
––– 2.38
Gate-to-Emitter Leakage Current
––– –––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 500µA
––– V/°C V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
3.0
I
C
= 6.0A
V
GE
= 15V
3.7
V
I
C
= 6.0A
V
GE
= 15V T
J
= 125°C
6.0
V
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
–––
S
V
CE
= 50V, I
C
= 6.0A, PW=80µs
100
µA
V
GE
= 0V, V
CE
= 1200V
200
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
2.45
I
F
= 6.0A
T
J
= 125°C
2.75
V
I
F
= 6.0A
±100 nA
V
GE
= ±20V
Ref.Fig.
5, 6,7
9,10,11
9,10,11
12
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Qg
Qge
Qgc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ref.Fig.
Max. Units
Conditions
23
38
I
C
= 6.0A
5.6
nC V
CC
= 800V
CT1
20
V
GE
= 15V
CT4
440
µJ
I
C
= 6.0A, V
CC
= 600V
440
V
GE
= 15V,R
G
= 50Ω, L =3.7mH
880
Ls = 150nH
T
J
= 25°C
CT4
29
I
C
= 6.0A, V
CC
= 600V
27
V
GE
= 15V, R
G
= 50Ω L =3.7mH
120
ns
Ls = 150nH, T
J
= 25°C
25
CT4
660
I
C
= 6.0A, V
CC
= 600V
13,15
560
µJ
V
GE
= 15V,R
G
= 50Ω, L =3.7mH
WF1WF2
1220
Ls = 150nH
T
J
= 125°C
14, 16
27
I
C
= 6.0A, V
CC
= 600V
CT4
25
V
GE
= 15V, R
G
= 50Ω L =3.7mH
150
ns
Ls = 150nH, T
J
= 125°C
WF1
29
WF2
–––
V
GE
= 0V
22
–––
pF
V
CC
= 30V
–––
f = 1.0MHz
4
T
J
= 150°C, I
C
= 24A, Vp =1200V
Reverse Bias Safe Operting Area
FULL SQUARE
V
CC
= 1000V, V
GE
= +15V to 0V,
R
G
=50Ω
CT2
CT3
µs
T
J
= 150°C, Vp =1200V, R
G
= 50Ω
Short Circuit Safe Operting Area
10 ––– –––
WF4
V
CC
= 900V, V
GE
= +15V to 0V
17,18,19
Reverse Recovery energy of the diode ––– 360 –––
µJ
T
J
= 125°C
20, 21
Diode Reverse Recovery time
––– 160 –––
ns
V
CC
= 600V, I
F
= 6.0A, L = 2.0mH
CT4,WF3
Diode Peak Reverse Recovery Current ––– 9.0 –––
A
V
GE
= 15V,R
G
= 50Ω, Ls = 150nH
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
25
3.7
13
390
330
720
22
19
100
19
440
370
810
21
18
110
22
370
33
11
Note:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100µH, R
G
= 50Ω.
Energy losses include "tail" and diode reverse recovery.
2
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IRGB5B120KDPbF
14
12
10
Ptot (W)
100
80
IC (A)
8
6
4
60
40
20
2
0
0
20
40
60
80
100 120 140 160
T C (°C)
0
0
50
100
T C (°C)
150
200
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
100
100
10
10 µs
IC (A)
10
1
DC
0.1
100 µs
IC A)
1
0
1ms
10ms
0.01
1
10
100
VCE (V)
1000
10000
10
100
1000
10000
VCE (V)
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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3
IRGB5B120KDPbF
20
VGE = 18V
16
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
16
ICE (A)
8
ICE (A)
0
2
4
VCE (V)
6
8
12
12
8
4
4
0
0
0
2
4
VCE (V)
6
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
IF (A)
20
-40°C
25°C
125°C
16
16
ICE (A)
12
VGE = 8.0V
12
8
8
4
4
0
0
2
4
VCE (V)
6
8
0
0.0
1.0
2.0
VF (V)
3.0
4.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
4
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IRGB5B120KDPbF
20
18
16
14
VCE (V)
20
ICE = 6.0A
ICE = 12A
ICE = 24A
VCE (V)
18
16
14
12
10
8
6
4
2
5
10
VGE (V)
15
ICE = 6.0A
ICE = 12A
ICE = 24A
12
10
8
6
4
2
0
5
10
VGE (V)
15
20
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
16
14
VCE (V)
50
ICE = 6.0A
ICE = 12A
ICE = 24A
ICE (A)
T J = 25°C
40
T J = 125°C
12
10
8
6
4
2
5
10
VGE (V)
15
20
30
20
T J = 125°C
T J = 25°C
0
5
10
VGE (V)
15
20
10
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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5
Embedded System
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