AP9924AGO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low on-resistance
▼
Capable of 2.5V gate drive
▼
Halogen Free & RoHS Compliant Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S2
G2
20V
22mΩ
5A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S2
G1
TSSOP-8
S1
D
S1
D
D
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
20
+8
5
4
20
0.83
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
150
Unit
℃/W
1
200907161
Data and specifications subject to change without notice
AP9924AGO-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=3A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Min.
20
-
-
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
18
-
-
7.2
0.6
3.4
6.2
10
15
5
275
95
85
2.2
Max. Units
-
22
30
1
-
10
+100
11.5
-
-
-
-
-
-
440
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
DS
=20V, V
GS
=0V
V
GS
= +8V, V
DS
=0V
I
D
=5A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω,V
GS
=5V
R
D
=10Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=0.7A, V
GS
=0V
I
S
=2A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
18.5
9
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 250℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9924AGO-HF
30
30
T
A
= 25 C
I
D
, Drain Current (A)
o
I
D
, Drain Current (A)
4.5V
3.5V
2.5V
V
G
= 2.0 V
T
A
=150
o
C
4.5V
3.5V
2.5V
V
G
= 2.0 V
20
20
10
10
0
0
1
2
3
4
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.6
I
D
=3A
T
A
=25
o
C
26
1.4
I
D
=5A
V
G
=4.5V
22
Normalized R
DS(ON)
1
2
3
4
5
R
DS(ON)
(m
Ω
)
1.2
18
1.0
14
0.8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
8
Normalized V
GS(th)
(V)
1.2
1.2
6
I
S
(A)
4
T
j
=150
o
C
T
j
=25 C
o
0.8
2
0
0
0.2
0.4
0.6
0.8
1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9924AGO-HF
f=1.0MHz
8
500
V
GS
, Gate to Source Voltage (V)
400
6
I
D
=5A
V
DS
=16V
4
C (pF)
300
C
iss
200
2
100
C
oss
C
rss
0
0
2
4
6
8
10
12
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
Operation in this
area limited by
R
DS(ON)
100us
0.1
0.1
I
D
(A)
0.05
1ms
1
0.02
0.01
10ms
100ms
0.1
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=250
o
C/W
1s
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
100
DC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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