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R3000F

Description
0.3 A, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size26KB,1 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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0.3 A, SILICON, SIGNAL DIODE, DO-41

R3000F Parametric

Parameter NameAttribute value
MakerLRC
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)4 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum output current0.2 A
Maximum repetitive peak reverse voltage3000 V
Maximum reverse recovery time0.5 µs
surface mountNO
LESHAN RADIO COMPANY, LTD.
R2000F– R5000F
HIGH VOLTAGE FAST RECOVERY DIODES
Maximum
Peak Reverse
Voltage
PRV
V
PK
Maximum Average
Rectified Current
@ Half-Wave
Resistive Load 60Hz
I
O
@ T
L
A
AV
ºC
Maximum
Forward Peak
Surge Current @
8.3ms Superimposed
I
FM
(Surge)
A
PK
Maximum
Reverse
Current @ PRV
@ T
A
=25ºC
I
R
TYPE
Maximum
Forward
Voltage
@ T
A
=25ºC
I
FM
A
PK
V
FM
V
PK
Maximum
Reverse
Recovery
Time
Trr
ns
Package
Dimensions
µAdc
R2000F
R3000F
R4000F
R5000F
2000
3000
4000
5000
0.2
0.2
0.2
0.2
50
50
50
50
30
30
30
30
5.0
5.0
5.0
5.0
0.2
0.2
0.2
0.2
2.0
4.0
5.0
5.0
500
500
500
500
DO –41
DO–15
Trr
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
Trr Test Conditions: I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
1.0(25.4)
MIN
.300(7.6)
.230(5.8)
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7) DIA
.080(2.0)
.034(0.9)
.028(0.7)
DIA
.140(3.6) DIA
.104(2.6)
DO – 41
DO – 15
30A–1/1
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