Advanced Technical Information
High Voltage
BIMOSFET
TM
in High Voltage
ISOPLUS i4-PAC
TM
Monolithic Bipolar MOS Transistor
IXBF 9N140
I
C25
IXBF 9N160
V
CES
V
CE(sat)
t
f
=
=
=
=
7A
1400/1600 V
4.9V
40 ns
1
5
IGBT
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
P
tot
T
C
= 25°C
T
C
= 90°C
V
GE
= 15/0 V; R
G
= 100
W;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
IXBF 9N140
IXBF 9N160
Maximum Ratings
1400
1600
±
20
7
4
12
0.8V
CES
70
W
V
V
V
A
A
A
Features
• High Voltage BIMOSFET
TM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
• ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
4.9
5.6
4
0.1
500
200
60
180
40
550
44
3.6
7
8
0.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
pF
nC
V
1.75 K/W
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
C
ies
Q
Gon
V
F
R
thJC
I
C
= 5 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.5 mA; V
GE
= V
CE
V
CE
= 0.8V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 960 V; I
C
= 5 A
V
GE
= 15/0 V; R
G
= 100
W
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 7 A
(reverse conduction); I
F
= 5 A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
031
IXBF 9N140
IXBF 9N160
30
T
J
= 25°C
V
GE
= 17V
15V
30
T
J
= 125°C
V
GE
= 17V
15V
13V
25
13V
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
I
C
- Amperes
I
C
- Amperes
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
V
CE
- Volts
V
CE
- Volts
Fig. 1 Typ. Output Characteristics
30
V
CE
= 20V
Fig. 2 Typ. Output Characteristics
30
25
25
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
- Amperes
I
C
- Amperes
20
15
10
5
0
4
6
8
10
12
14
20
15
10
5
0
0
2
4
6
8
10
V
GE
- Volts
V
F
- Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse
Conduction
15
16
14
12
V
CE
= 600V
I
C
= 5A
I
CM
- Amperes
V
GE
- Volts
10
8
6
4
2
0
0
10
20
30
40
50
10
T
J
= 125°C
V
CEK
< V
CES
5
IXBF 9N140
IXBF 9N160
0
0
400
800
1200
1600
Q
G
- nanocoulombs
V
CE
- Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Biased Safe Operating Area
RBSOA
© 2000 IXYS All rights reserved
3-4
IXBF 9N140
IXBF 9N160
70
250
T
J
= 125°C
50
40
30
20
0
2
4
6
8
10
12
14
16
t
d(off )
- nanoseconds
t
fi
- nanoseconds
60
R
G
= 100
W
V
CE
= 960V
V
GE
= 15V
V
CE
= 960V
V
GE
= 15V
200
I
C
= 5A
T
J
= 125°C
150
100
50
0
0
20
40
60
80
100 120 140 160
I
C
- Amperes
R
g
- Ohms
Fig. 7 Typ. Fall Time
10
Fig. 8 Typ. Turn Off Delay Time
1
Z
thJC
- K/W
0.1
Single Pulse
0.01
0.001
0.0001
IXBF09
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Fig. 9 Typ. Transient Thermal Impedance
© 2000 IXYS All rights reserved
4-4
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