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KBL01

Description
4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size76KB,2 Pages
ManufacturerETC
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KBL01 Overview

4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

E-MAIL:
info@angliac.com
WEB:
www.angliac.com
KBL0 SERIES
4.0 AMPERE SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE
50 to 1000 Volts PRV
CURRENT
4.0 Amperes
FEATURES
Plastic material has Underwriters Laboratory
flammability classification 94V-0
Low leakage.
Surge overload rating - 200 amperes peak.
Ideal for printed circuit boards.
Exceeds environmental standards of
MIL - STD - 19500.
+
~
~
±
16.4
15.2
19.0
min
Ø 1.3
5.6
4.6
6.5
6.0
19.6
18.5
MECHANICAL DATA
Case
:
:
:
Terminals :
:
Polarity :
Weight
:
Reliable low cost construction utilizing
moulded plastic technique results in
inexpensive product.
Leads, solderable per MIL - STD - 202,
Method 208.
Polarity symbols printed on body.
0.2 ounce, 5.6 grams.
2.1
Dimensions in millimetres
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
KBL005
Maximum Recurrent Peak Reverse Voltage
Maximum Bridge Input Voltage RMS
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
50
35
50
KBL01
100
70
100
KBL02
200
140
200
KBL04
400
280
400
4.0
200
1.0
10.0
1.0
- 55 to + 125
- 55 to + 150
KBL06
600
420
600
KBL08
800
560
800
KBL10
1000
700
1000
V
V
V
A
A
V
µA
mA
°C
°C
Maximum Average Forward Current at
I
F(AV)
(see Fig 2)
T
A
= 50 °C
Peak Forward Surge Current, 8.3 ms single
I
FSM
half sine - wave superimposed on rated load (see Fig 1)
Maximum Forward Voltage Drop
per Element at 3.0A
Maximum Reverse Current at Rated DC
Blocking Voltage per Element (see Fig 4)
Operating Temperature Range
Storage Temperature Range
(see Fig 3)
T
A
= 25°C
T
C
= 100°C
V
F
I
R
T
J
T
STG
Reformatted by Anglia 9851

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KBL01 KBL0 KBL005 KBL02 KBL04 KBL06 KBL08 KBL10
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