DSEP 9-06CR
HiPerDynFRED
TM
Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
I
FAV
= 9 A
V
RRM
= 600 V
t
rr
= 15 ns
V
RSM
V
600
V
RRM
V
600
Type
A
C
ISOPLUS 247
TM
C
A
Isolated back surface *
DSEP 9-06CR
A = Anode, C = Cathode
* Patent pending
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 140°C; rectangular, d = 0.5
t
P
< 10 µs; rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 2 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
50
9
tbd
80
0.5
A
A
A
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low cathode to tab capacitance (< 25 pF)
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
• Isolated and UL registered E153432
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
de
0.2
-55...+175
175
-55...+150
150
2500
T
C
= 25°C
50/60 Hz RMS; I
ISOL
≤
1 mA
mounting force with clip
typical
ne
r
0.25
15
3.5
w
fo
Conditions
20...120
6
Symbol
I
R
①
t
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 9 A;
T
VJ
= 150°C
T
VJ
= 25°C
No
Characteristic Values
typ.
max.
50
0.2
2.9
4.0
1
µA
mA
V
V
K/W
K/W
ns
4.1
A
V
F
②
R
thJC
R
thCH
t
rr
I
RM
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
si
A
mJ
A
°C
°C
°C
W
V~
N
g
gn
Dimensions see Outlines.pdf
Recommended replacement:
DPH30IS600HI
1-2
20080317a
DSEP 9-06CR
0.4
T
VJ
= 100°C
µC V = 300 V
R
0.3
20
15
10
5
0
0
1
2
3
V
F
4 V 5
0.0
100
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
Q
r
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
I
RM
20
A
15
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
T
VJ
= 100°C
V
R
= 300 V
30
A
25
I
F
0.2
10
0.1
5
Fig. 1 Max. forward current
I
F
versus V
F
1.4
1.2
1.0
K
f
0.8
I
RM
0.6
0.4
0.2
0.0
0
40
80
120 °C 160
T
VJ
Q
R
t
rr
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
45
ns
40
T
VJ
= 100°C
V
R
= 300 V
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
80
V
1.6
T
VJ
= 100°C
I
F
= 10 A
µs
1.2
t
fr
40
0.8
35
ne
w
20
de
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
si
gn
V
FR
60
0.4
r
30
0
400
600
-di
F
/dt
800
A/µs 1000
0
t
rr
200
400
0
200
fo
0.0
600 A/µs 1000
800
di
F
/dt
V
FR
K/W
1
Z
thJC
0.1
No
10
t
Fig. 4 Typ. dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
0.01
0.0001
DSEP 9-06CR
0.001
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal resistance junction to case
© 2004 IXYS All rights reserved
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