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2SD999K

Description
Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size436KB,5 Pages
ManufacturerGalaxy Microelectronics
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2SD999K Overview

Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,

2SD999K Parametric

Parameter NameAttribute value
Objectid8328502897
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknown
Country Of OriginMainland China
ECCN codeEAR99
YTEOL7.78
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz

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