Standard SRAM, 1KX1, 250ns, MOS, CDIP16, CERAMIC, DIP-16
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1435849665 |
| package instruction | DIP, DIP16,.3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum access time | 250 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-CDIP-T16 |
| JESD-609 code | e0 |
| memory density | 1024 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 1 |
| Humidity sensitivity level | 2A |
| Number of functions | 1 |
| Number of terminals | 16 |
| word count | 1024 words |
| character code | 1000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP16,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
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