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QM400HA-H

Description
HIGH POWER SWITCHING USE INSULATED TYPE
CategoryDiscrete semiconductor    The transistor   
File Size66KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

QM400HA-H Overview

HIGH POWER SWITCHING USE INSULATED TYPE

QM400HA-H Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-PUFM-X5
Reach Compliance Codeunknow
Other featuresBUILT IN BIAS RESISTORS
Maximum collector current (IC)400 A
ConfigurationCOMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
Maximum landing time (tf)35000 ns
JESD-30 codeR-PUFM-X5
Number of components3
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)1500 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max2.5 V
MITSUBISHI TRANSISTOR MODULES
QM400HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM400HA-H
I
C
Collector current ........................
400A
V
CEX
Collector-emitter voltage ...........
600V
h
FE
DC current gain.............................
750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93
10 18.5
M4
BX
9
10 10
E
25
27
26.5
φ6.5
E
M6
BX
C
E
8
B
C
16
25
13.5
62
48
B
9
16
9
37.5
28
107
E
4.5
32.2
24.5
7 13
LABEL
35
Feb.1999
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