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2N2219A

Description
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,1 Pages
ManufacturerRaytheon Company
Websitehttps://www.raytheon.com/
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2N2219A Overview

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

2N2219A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1676908758
package instructionTO-5, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns
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