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K7A321800M-FI22

Description
Standard SRAM, 2MX18, 2.8ns, CMOS, PBGA165
Categorystorage    storage   
File Size356KB,28 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7A321800M-FI22 Overview

Standard SRAM, 2MX18, 2.8ns, CMOS, PBGA165

K7A321800M-FI22 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1155503132
package instructionBGA, BGA165,11X15,40
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time2.8 ns
Maximum clock frequency (fCLK)227 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee0
memory density37748736 bit
Memory IC TypeSTANDARD SRAM
memory width18
Humidity sensitivity level3
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Minimum standby current3.14 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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