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MBR1545CT

Description
15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size69KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MBR1545CT Overview

15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR1545CT Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-220
package instructionR-PSFM-T3
Contacts3
Manufacturer packaging codeTO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code_compli
ECCN codeEAR99
Samacsys DescriptiDIODE ARRAY SCHOTTKY 45V TO220AB
Other featuresLOW POWER LOSS, FREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.84 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation41.7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountNO
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
MBR1535CT- MBR1560CT
MBR1535CT - MBR1560CT
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guarding for over voltage protection.
PIN 1
+
PIN 3
CASE
PIN 2
1
2
3
TO-220AB
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
1535
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 105°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
35
Value
1545
45
15
150
-65 to +175
-65 to +150
1550
50
1560
60
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Parameter
Value
41.7
60
3.0
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
T
A
= 25°C unless otherwise noted
Parameter
1535
Forward Voltage I
F =
7.5 A, T
C
= 25°C
I
F =
7.5 A, T
C
= 125°C
I
F =
15 A, T
C
= 25°C
I
F =
15 A, T
C
= 125°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 125°C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
-
0.57
0.84
0.72
0.1
15
1.0
Device
1545
1550
1560
0.75
0.65
-
-
1.0
50
0.5
Units
V
V
V
V
mA
mA
A
I
R
I
RRM
2001
Fairchild Semiconductor Corporation
MBR1535CT - MBR1560CT, Rev. C
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