MDD312-22N1
High Voltage Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 2200 V
=
=
310 A
1.03 V
Phase leg
Part number
MDD312-22N1
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
Y1
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116i
© 2017 IXYS all rights reserved
MDD312-22N1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
2300
V
2200
500
30
1.13
1.33
1.03
1.29
310
520
0.80
0.6
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
1040
10.8
11.7
9.18
9.92
W
kA
kA
kA
kA
V
R
= 2200 V
V
R
= 2200 V
I
F
= 300 A
I
F
= 600 A
I
F
= 300 A
I
F
= 600 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 100 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.12 K/W
0.04
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
288
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
583.2 kA²s
566.1 kA²s
421.4 kA²s
409.0 kA²s
pF
C
J
junction capacitance
V
R
= 700 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116i
© 2017 IXYS all rights reserved
MDD312-22N1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y1
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
600
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
680
4.5
11
16.0
16.0
3600
3000
7
13
Production
Index (PI)
Date Code
(DC)
yywwAA
Circuit
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MDD312-22N1
Marking on Product
MDD312-22N1
Delivery Mode
Box
Quantity
3
Code No.
467278
Similar Part
MDD312-12N1
MDD312-14N1
MDD312-16N1
MDD312-18N1
MDD312-20N1
Package
Y1-CU
Y1-CU
Y1-CU
Y1-CU
Y1-CU
Voltage class
1200
1400
1600
1800
2000
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.8
0.4
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116i
© 2017 IXYS all rights reserved
MDD312-22N1
Outlines Y1
3x M8
15
±1
2.8 x 0.8
52
+0
-1,4
49
2
32
+0
-1,9
10
20
22.5
35
28.5
45 67
1
2
6.2
80
92
115
18
3
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
38
50
43
45
20170116i
© 2017 IXYS all rights reserved
MDD312-22N1
Rectifier
10000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
10
6
V
R
= 0 V
500
400
8000
DC
180 ° sin
120 °
60 °
30 °
I
FSM
[A]
I
2
t
6000
[A s]
T
VJ
= 150°C
2
I
FAVM
T
VJ
= 45°C
300
[A]
200
4000
100
10
5
0.01
0.1
t
[s]
1
1
t
[ms]
2
2000
0
10
0
25
50
75
100 125 150
T
C
[°C]
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 I t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
600
R
thKA
K/W
600
0.06
0.1
0.2
0.3
0.4
0.6
0.8
DC
180 ° sin
120 °
60 °
30 °
500
400
P
tot
300
[W]
200
100
0
0
100
200
300
400
500
0
25
50
75
100
500
400
I
RM
300
[A]
200
100
0
T
VJ
= 125°C
V
R
= 600 V
I
F
= 400 A
125
150
0
50
100
150
200
I
FAVM
[A]
T
A
[°C]
di
F
/dt
[A/µs]
Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode)
Fig. 5 Typ. peak reverse current
1750
R
thKA
K/W
25
0.04
0.06
0.08
0.12
0.2
0.3
0.5
T
VJ
= 125°C
V
R
= 600 V
1500
1250
P
tot
[W]
750
500
250
0
0
100 200 300 400 500 600
I
dAVM
[A]
0
25
50
75
100
Circuit
B2U
2 x MDD312
R
L
20
1000
t
rr
[µs]
15
I
F
= 400 A
10
5
0
125
150
0
50
100
150
200
T
A
[°C]
di
F
/dt
[A/µs]
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature
R = resistive load, L = inductive load
Fig. 7 Typ. recovery time t
rr
versus -di
F
/dt
20170116i
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
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