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MDD312-18N1

Description
310 A, 1200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size289KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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MDD312-18N1 Overview

310 A, 1200 V, SILICON, RECTIFIER DIODE

MDD312-18N1 Parametric

Parameter NameAttribute value
Number of components2
Number of terminals3
each_compliYes
EU RoHS regulationsYes
stateActive
Diode typeRECTIFIER DIODE
applicationGENERAL PURPOSE
Shell connectionISOLATED
structureSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Maximum forward voltage1.32 V
jesd_30_codeR-XUFM-X3
moisture_sensitivity_levelNOT SPECIFIED
Maximum non-repetitive peak forward current10500 A
Phase1
Minimum operating temperature-40 Cel
Maximum operating temperature150 Cel
Maximum output current310 A
Packaging MaterialsUNSPECIFIED
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
qualification_statusCOMMERCIAL
Maximum repetitive peak reverse voltage1200 V
sub_categoryRectifier Diodes
surface mountNO
terminal coatingNOT SPECIFIED
Terminal formUNSPECIFIED
Terminal locationUPPER
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
MDD312-22N1
High Voltage Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 2200 V
=
=
310 A
1.03 V
Phase leg
Part number
MDD312-22N1
Backside: isolated
2
1
3
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For single and three phase
bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package:
Y1
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Base plate: Copper
internally DCB isolated
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116i
© 2017 IXYS all rights reserved

MDD312-18N1 Related Products

MDD312-18N1 MDD312-12N1 MDD312-14N1 MDD312-16N1 MDD312-20N1 MDD312-22N1
Description 310 A, 1200 V, SILICON, RECTIFIER DIODE 310 A, 1200 V, SILICON, RECTIFIER DIODE 310 A, 1200 V, SILICON, RECTIFIER DIODE 310 A, 1600 V, SILICON, RECTIFIER DIODE 310 A, 1200 V, SILICON, RECTIFIER DIODE 310 A, 1200 V, SILICON, RECTIFIER DIODE
Number of components 2 2 2 2 2 2
Number of terminals 3 3 3 3 3 3
each_compli Yes Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes Yes
state Active Active Active Active Active Active
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
structure SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Maximum forward voltage 1.32 V 1.32 V 1.32 V 1.32 V 1.32 V 1.32 V
jesd_30_code R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum non-repetitive peak forward current 10500 A 10500 A 10500 A 10500 A 10500 A 10500 A
Phase 1 1 1 1 1 1
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel
Maximum output current 310 A 310 A 310 A 310 A 310 A 310 A
Packaging Materials UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Maximum repetitive peak reverse voltage 1200 V 1200 V 1200 V 1600 V 1200 V 1200 V
sub_category Rectifier Diodes Rectifier Diodes Rectifier Diodes Rectifier Diodes Rectifier Diodes Rectifier Diodes
surface mount NO NO NO NO NO NO
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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