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NX3020NAKS

Description
30 V, 180 mA dual N-channel Trench MOSFET
File Size278KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

NX3020NAKS Overview

30 V, 180 mA dual N-channel Trench MOSFET

NX3020NAKS
11 November 2013
30 V, 180 mA dual N-channel Trench MOSFET
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 100 mA; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
30
20
180
Unit
V
V
mA
Static characteristics (per transistor)
drain-source on-state
resistance
[1]
2
-
2.7
4.5
Ω
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .
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