Note 1. The values specified for field of view are approximate and are critically
dependent on the dimensional tolerances of the package components parts.
Electrical Characteristics at TA= 22°C At a DC Reverse Operating Voltage (VR) = 45 Volts
2
,
unless otherwise specified
Type C30807
Min
Typ
Max
Breakdown Voltage, V
BR
Responsivity:
At 900 nm
At 1060 nm
Quantum Efficiency:
At 900 nm
At 1060 nm
Dark Current, i
d
:
See Figure 2
At V
R
= 10 V
At V
R
= 45V
Noise Current, I
n
:
See Figure 3
f = 1000 Hz,
∆f
= 1.0 Hz
Noise Equivalent Power (NEP):
f = 1000 Hz,
∆f
= 1.0 Hz
At 900 nm
At 1060 nm
Capacitance, C
d
:
See Figure 4
Rise Time, t
r
:
R
L
= 50
Ω, λ
= 900 nm,
10% to 90% points
Fall Time:
R
L
= 50
Ω, λ
= 900 nm,
10% to 90% points
100
0.5
0.1
70
12
-
-
-
-
0.6
0.15
85
15
2x10
-9
1x10
-8
6x10
-14
-
-
-
-
-
1x10
-8
5x10
-8
4.2x10-
13
Type C30808
Min
Typ
Max
100
0.5
0.1
70
12
-
-
-
-
0.6
0.15
83
17
5x10
-9
3x10
-8
1x10
-13
-
-
-
-
-
2.5x10
-8
1.5x10
-7
7x10
-13
Type C30839
Min
Typ
Max
100
0.5
0.1
70
12
-
-
-
-
0.6
0.15
83
17
2.5x10
-8
7x10
-8
-
-
-
-
-
1.3x10
-7
3.5x10
-7
Units
V
A/W
A/W
%
%
A
A
A/Hz
1/2
1.5x10
-13
1.1x10
-12
-
-
-
1x10
-13
4x10
-13
2.5
8x10
-13
3.2x10
-12
3
-
-
-
1.5x10
-13
1.2x10
-12
6.5x10
-13
5.2x10
-12
6
10
-
-
-
2x10
-13
1x10
-12
35
1.6x10
-12
8x10
-12
45
W/Hz
1/2
W/Hz
1/2
pF
-
3
5
-
5
8
-
10
15
ns
-
6
10
-
8
13
-
15
20
ns
Note 2. The recommended range of reverse operating voltage VR at TA = 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at VR = 0
volts, some of the electrical characteristics will differ from those shown.
Figure 2. Typical Dark Current vs. Ambient Temperature
Electrical Characteristics at TA= 22°C At a DC Reverse Operating Voltage (VR) = 45 Volts
2
,
2
Specifications (at specified
unless otherwise V
R
= 45 Volts (typical), 22°C)
Type C30810
Min
Typ
Max
Breakdown Voltage, V
BR
100
Responsivity:
At 900 nm
0.5
At 1060 nm
0.1
Quantum Efficiency:
At 900 nm
70
At 1060 nm
12
Dark Current, i
d
:
See Figure 2
At V
R
= 10V
-
At V
R
= 45V
-
Noise Current, I
n
:
See Figure 3
f = 1000 Hz,
∆f
= 1.0 Hz
-
Noise Equivalent Power (NEP):
f = 1000 Hz,
∆f
= 1.0 Hz
At 900 nm
-
At 1060 nm
-
Capacitance, C
d
:
See Figure 4
-
Rise Time, t
r
:
RL = 50
Ω, λ
= 900 nm,
10% to 90% points
-
Fall Time:
RL = 50
Ω, λ
= 900 nm,
10% to 90% points
-
-
0.6
0.15
83
17
8x10
-8
3x10
-7
3x10
-13
-
-
-
-
-
4x10
-7
1.5x10
-6
2.1x10
-12
Type C30822
Min
Typ
Max
100
0.5
0.1
-
-
-
-
-
-
0.6
0.15
83
17
1x10
-8
5x10
-8
-
-
-
-
-
5x10
-8
2.5x10
-7
Type C30831
Min
Typ
Max
100
0.5
0.1
-
-
-
-
-
-
0.6
0.15
83
17
1x10
-9
1x10
-8
6x10
-14
-
-
-
-
-
5x10
-9
5x10
-8
4.2x10
-13
Units
V
A/W
A/W
%
%
A
A
A/Hz
1/2
1.3x10
-13
9x10
-13
4.5x10
-13
3.6x10
-12
2x10
-12
1.6x10
-11
70
90
-
-
-
2x10
-13
1.5x10
-12
8x10
-13
7x10
-12
17
20
-
1
-
1x10
-13
8x10
-13
4x10
-13
3.2x10
-12
2
2.5
W/Hz
1/2
W/Hz
1/2
pF
12
17
-
7
12
-
3
5
ns
20
30
-
10
15
-
6
10
ns
Note 2. The recommended range of reverse operating voltage VR at TA = 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at VR = 0
volts, some of the electrical characteristics will differ from those shown.
C30807, C30808, C30809, C30810, C30822, C30831
Figure 3. Typical Noise Current vs. Frequency
Figure 4. Typical Photodiode Capacitance vs. Operating Voltage
Figure 5. Definition of Half-Angle Approx. Field-of-View. (Scale is exaggerated
for clarity)
Figure 6. Dimensional Outline for C30807 and C30831
Figure 7. Dimensional Outline for C30809
Figure 8. Dimensional Outline for C30808
Dimensions in millimeters. Dimensions in parentheses are in inches.
C30807, C30808, C30809, C30810, C30822, C30831
Figure 9. Dimensional Outline for C30810
Figure 10. Dimensional Outline for C30822
For more information e-mail us at opto@perkinelmer.com or visit our web site at www.perkinelmer.com/opto
PerkinElmer Optoelectronics
22001 Dumberry Road,
Vaudreuil, Québec
Canada J7V 8P7
Phone: (450) 424-3300
Fax: (450) 424-3411
All values are nominal; specifications subject to change without notice.
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