Silicon Bipolar High f
T
Low Noise
Microwave Transistors
Features
•f
T
to 9 GHz
•Low
Noise Figure
•High
Associated Gain
•Hermetic
and Surface Mount Packages Av ailable
•Can
be Screened to JANTX, JANTXV Equiv alent Lev els
•Industry
Standard
MP4T645
Case Styles
Description
The MP4T645 family of high gain-bandwidth, small
signal silicon bipolar transistors is well suited for use in
amplifiers to approximately 4 GHz, and in oscillators to
approximately 10 GHz. These industry standard transis-
tors freature low noise figure at high collector current,
which produces v ery good associated gain and wide
dynamic range. The MP4T645 series transistors are
av ailable
in
a
hermetic
microstrip
package
(MP4T64535), in the plastic SOT-23 package
(MP4T64533), in chip form (MP4T64500), and in the
SOT-143 package (MP4T64539). The MP4T645 series
is av ailable in other plastic and hermetic packages as
well. The chip and hermetically packaged transistors
can be screened to a JANTXV equiv alent lev el.
SOT-23
SOT-143
Chip
Applications
The MP4T645 family of bipolar NPN transistors can be
used for low noise, high associated gain. large dynamic
range amplifiers up to approximately 4 GHz. These
transistors can also be used as preamplifier or driv er
stages in the same frequency range.
The MP4T645 family of bipolar NPN transistors can also
be used for oscillators or VCOs up to approximately 10
GHz.
The passiv ation consists of silicon dioxide,
commonly known as thermal oxide, and silicon nitride to
produce v ery low 1/f noise in both amplifiers and
oscillators.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High f
T
Low Noise Microwave Transistors
Absolute Maximum Ratings
MP4T645 Series
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Operating Temperature
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
Total Power Dissipation at 25°
C
Derate Linearly to:
+150° Chip
C
+125° Plastic Package (SOT-23)
C
+150° Ceramic Package (Micro-X)
C
400 mW
200 mW
300 mW
V
CBO
V
CEO
V
EBO
I
C
T
j
25 V
12 V
1.5 V
65 mA
200°
C
-65° to +200°
C
C
-65° to +125°
C
C
MP4T645 Series
Electrical Specifications @ 25°
C
MP4T645 Series
MP4T64500
Parameter of Test
Gain Bandwidth Product
Insertion Power Gain
Condition
V
CE
= 8 volts
I
C
= 20 mA
V
CE
= 8 volts
I
C
= 20 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
V
CE
= 8 volts
I
C
= 7 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8 volts
I
C
= 7 mA
f = 1 GHz
f = 2 GHz
V
CE
= 8 volts
I
C
= 10 mA
f = 2 GHz
f = 4 GHz
V
CE
= 8 volts
I
C
= 10 mA
f = 1 GHz
f = 4 GHz
Symbol
f
T
|S
21E
|
2
Units
GHz
dB
18 typ
11 min
7 typ
NF
dB
1.7 max
2.0 typ
GTU (max)
dB
18 typ
11 typ
MAG
dB
14 typ
12 typ
P
1dB
dBm
16 typ
11 typ
16 typ
11 typ
16 typ
11 typ
13 typ
10 typ
14 typ
11.5 typ
16 typ
10 typ
17 typ
11 typ
1.7 max
2.5 typ
1.7 max
2.0 typ
16 typ
10 min
17 typ
10 min
6.5 typ
Chip
10 typ
MP4T64535
SOT-23
8 typ
MP4T64533
Micro-X
9 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Power Out at 1 dB
Compression
Note:
The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23).
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Electrical Specifications @ 25°
C
MP4T645 Series
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Forward Current Gain
Collector-Base
Junction Capacitance
Condition
V
CB
= 8 volts
I
E
= 0
µA
V
EB
= 1 volt
I
C
= 0
µA
V
CE
= 8 volts
I
C
= 7 mA
V
CB
= 10 volts
I
E
= 0
µA
f = 1 MHz
Symbol
I
CBO
I
EBO
h
FE
C
CO
Min
30
Typical
125
0.3
Max
100
1
250
0.6
Units
nA
µA
pF
Typical Scattering Parameters in the MIcro-X Package
MP4T64535, V
CE
= 8 Volts, I
C
= 7 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.583
0.569
0.573
0.587
0.598
0.616
0.645
0.675
0.705
0.749
0.791
0.832
Angle
-114
-153
-173
170
159
150
142
132
124
115
106
96
Mag.
9.315
5.399
3.807
2.980
2.479
2.132
1.935
1.782
1.631
1.538
1.445
1.395
S21E
Angle
116.1
94.7
82.0
72.0
62.7
54.8
47.0
38.5
29.6
22.0
14.4
6.1
Mag.
0.052
0.063
0.072
0.082
0.092
0.103
0.118
0.130
0.143
0.159
0.176
0.188
S12E
Angle
43.6
39.0
40.0
42.5
44.0
45.2
45.5
45.7
45.5
44.5
43.6
42.3
Mag
0.573
0.406
0.357
0.313
0.299
0.304
0.289
0.281
0.292
0.281
0.283
0.306
S22E
Angle
-42.6
-53.0
-57.1
-61.8
-71.7
-78.5
-86.5
-96.6
-105.5
-114.1
-125.7
-135.0
MP4T64535, V
CE
= 8 Volts, I
C
= 10 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.562
0.564
0.575
0.592
0.601
0.618
0.648
0.677
0.706
0.749
0.790
0.831
Angle
-128
-161
176
166
156
148
139
130
122
113
104
95
Mag.
10.477
5.845
4.088
3.185
2.638
2.266
2.053
1.892
1.734
1.634
1.532
1.482
S21E
Angle
111.9
92.1
80.5
70.9
62.0
54.5
46.9
38.6
29.8
22.3
14.8
6.4
Mag.
0.044
0.056
0.068
0.080
0.092
0.105
0.122
0.136
0.150
0.167
0.184
0.196
S12E
Angle
44.5
44.0
46.5
49.0
49.7
50.1
49.4
48.7
47.9
46.1
44.4
42.6
Mag
0.515
0.358
0.313
0.276
0.268
0.272
0.259
0.253
0.264
0.257
0.259
0.278
S22E
Angle
-46.2
-53.8
-57.2
-62.3
-71.7
-78.3
-87.0
-96.9
-106.0
-115.1
-126.3
-136.0
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High f
T
Low Noise Microwave Transistors
MP4T645 Series
Typical Scattering Parameters in the MIcro-X Package (Cont’
d)
MP4T64535, V
CE
= 8 Volts, I
C
= 20 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11E
Mag.
0.536
0.565
0.579
0.592
0.612
0.630
0.660
0.691
0.719
0.760
0.803
0.844
Angle
-154
-177
170
160
151
142
134
125
117
109
101
92
Mag.
11.788
6.309
4.350
3.368
2.798
2.390
2.156
1.984
1.809
1.697
1.594
1.540
S21E
Angle
104.0
87.5
77.0
68.6
60.1
52.6
45.4
37.2
28.4
21.3
13.8
6.0
Mag.
0.033
0.046
0.062
0.077
0.093
0.108
0.126
0.141
0.155
0.173
0.192
0.210
S12E
Angle
49.8
55.7
57.7
59.3
58.0
56.5
54.4
52.6
50.9
48.5
46.0
44.2
Mag
0.390
0.284
0.270
0.237
0.226
0.243
0.231
0.223
0.240
0.229
0.229
0.258
S22E
Angle
-46.8
-53.2
-54.6
-57.5
-70.0
-77.2
-84.4
-95.8
-105.2
-112.6
-112.3
-136.2
Typical Scattering Parameters in the SOT-23 Package
MP4T64533, V
CE
= 8 Volts, I
C
= 7 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
S11E
Mag.
0.421
0.257
0.232
0.238
0.256
0.279
0.310
0.338
0.359
Angle
-95
-149
-176
157
140
126
116
106
97
Mag.
7.378
4.384
3.082
2.408
2.005
1.734
1.498
1.367
1.284
S21E
Angle
126.4
118.9
123.3
129.2
136.3
143.2
153.3
163.5
173.8
Mag.
0.062
0.100
0.140
0.183
0.224
0.274
0.308
0.350
0.402
S12E
Angle
77.9
97.9
116.2
130.9
145.7
160.8
172.0
173.6
161.0
Mag
0.519
0.402
0.368
0.354
0.346
0.339
0.331
0.320
0.327
S22E
Angle
-36.3
-36.9
-39.6
-44.7
-51.6
-58.8
-68.5
-80.1
-90.6
MP4T64533, V
CE
= 8 Volts, I
C
= 10 mA
Frequency
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
4500
S11E
Mag.
0.299
0.216
0.215
0.230
0.247
0.267
0.299
0.328
0.352
Angle
-116
-161
172
151
134
123
114
104
96
Mag.
8.385
4.558
3.185
2.487
2.064
1.783
1.548
1.410
1.320
S21E
Angle
119.4
116.9
122.7
129.0
136.4
143.8
153.9
164.0
174.5
Mag.
0.057
0.099
0.142
0.188
0.230
0.281
0.315
0.357
0.408
S12E
Angle
82.1
102.3
119.5
132.9
146.9
161.5
172.5
173.6
161.3
Mag
0.451
0.354
0.332
0.332
0.332
0.322
0.310
0.299
0.310
S22E
Angle
-33.9
-33.2
-37.7
-44.0
-50.1
-56.1
-66.4
-79.2
-90.1
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors
MP4T645 Series
Typical Performance Curves
MP4T645 Series
NOMINAL POWER DERATING CURVES
500
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMP (C)
MP4T64533 in
SOT-23 Package
MP4T64535 in
Micro-X Package
NOMINAL COLLECTOR-BASE CAPACITANCE vs
COLLECTOR-BASE VOLTAGE (MP4T64535)
0.6
COLLECTOR-BASE
CAPACITANCE (C
CB
) (pF)
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
1
10
COLLECTOR-BASE VOLTAGE
(V
CB
) (Volts)
100
450
TOTAL POWER
DISSIPATION (mW)
MP4T64500 Chip on
Infinite Heat Sink
NOMINAL GAIN vs FREQUENCY at
V
CE
= 8 VOLTS, I
C
= 10 mA (MP4T64535)
24
20
GAIN (dB)
16
GTU (MAX)
12
8
|S
21E
|2
4
0
1
2
FREQUENCY (GHz)
5
10
GAIN (dB)
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.5 GHz, V
CE
= 8 Volts (MP4T64535)
15
14
13
12
11
10
GTU (MAX)
MAG
9
8
7
6
1
10
COLLECTOR CURRENT (mA)
100
|S
21E
|2
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
5
Tel (408) 432-1480
Fax (408)) 432-3440
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