| Parameter Name | Attribute value |
| Transistor type | NPN |
| Collector-emitter breakdown voltage (Vceo) | 40V |
| Collector current (Ic) | 200mA |
| Power(Pd) | 350mW |
| Collector cut-off current (Icbo) | - |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 300mV@50mA,5mA |
| DC current gain (hFE@Ic,Vce) | 100@10mA,1V |
| Characteristic frequency (fT) | 300MHz |
| Operating temperature | +150℃@(Tj) |