8S256-85/BXCJC datasheet, PDF - EEWORLD Datasheet

8S256-85/BXCJC: DescriptionSRAM Module, 256KX8, 85ns, Hybrid, CDIP32; Categorystorage storage; File Size448KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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8S256-85/BXCJC Overview

SRAM Module, 256KX8, 85ns, Hybrid, CDIP32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	105359106
package instruction	DIP, DIP32,.6
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T32
JESD-609 code	e0
memory density	2097152 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.0025 A
Minimum standby current	4.5 V
Maximum slew rate	0.08 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	HYBRID
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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