MBR1635HE3/45 datasheet, PDF - EEWORLD Datasheet

MBRF16xx, MBRB16xx

www.vishay.com

Vishay General Semiconductor

Schottky Barrier Rectifier

FEATURES

ITO-220AC

D

2

PAK (TO-263AB)

• Power pack

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

K

2

1

MBRF16xx

PIN 1

PIN 2

1

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C (for D

2

PAK (TO-263AB) package)

K

MBRB16xx

PIN 1

PIN 2

HEATSINK

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for ITO-220AC package)

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

max.

Package

Diode variations

16 A

35 V to 60 V

150 A

0.57 V, 0.65 V

150 °C

ITO-220AC,

D

2

PAK (TO-263AB)

Single

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, and polarity protection application.

MECHANICAL DATA

Case:

ITO-220AC, D

2

PAK (TO-263AB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code, e.g. A, B, ...)

Terminals:

matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity:

as marked

Mounting Torque:

10 in-lbs maximum

MAXIMUM RATINGS

(T

C

= 25 °C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current at T

C

= 125 °C

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

Peak repetitive reverse current at t

p

= 2.0 µs, 1 kHz

Voltage rate of change (rated V

R

)

Operating junction temperature range

Storage temperature range

Isolation voltage (ITO-220AC only) from terminal to heatsink

t = 1 min

SYMBOL

V

RRM

V

RWM

V

DC

I

F(AV)

I

FSM

I

RRM

dV/dt

T

J

T

STG

V

AC

1.0

10 000

-65 to +150

-65 to +175

1500

MBRB1635

35

MBRB1645

45

16

150

0.5

V/μs

°C

V

A

MBRB1660

60

V

UNIT

Revision: 16-Nov-17

Document Number: 88671

1

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

MBRF16xx, MBRB16xx

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS

(T

C

= 25 °C unless otherwise noted)

PARAMETER

Maximum instantaneous forward voltage

Maximum instantaneous reverse current



at DC blocking voltage

SYMBOL

V

F (1)

I

R (1)

TEST CONDITIONS

I

F

= 16 A

I

F

= 16 A

Rated V

R

T

C

= 25 °C

T

C

= 125 °C

T

C

= 25 °C

T

C

= 125 °C

MBRB1635 MBRB1645 MBRB1660

0.63

0.57

0.2

40

0.75

0.65

1.0

50

UNIT

V

mA

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

(2)

Pulse test: pulse width



40 ms

THERMAL CHARACTERISTICS

(T

C

= 25 °C unless otherwise noted)

PARAMETER

Typical thermal resistance from junction to case

SYMBOL

R

JC

MBRF

3.0

MBRB

1.5

UNIT

°C/W

ORDERING INFORMATION

(Example)

PACKAGE

ITO-220AC

TO-263AB

ITO-220AC

TO-263AB

PREFERRED P/N

MBRF1645-E3/45

MBRB1645-E3/45

(2)

MBRB1645-E3/81

(2)

MBRF1645HE3/45

(1)

MBRB1645HE3_A/P

(1)(2)

MBRB1645HE3_A/I

(1)(2)

UNIT WEIGHT (g)

1.94

1.33

1.94

1.33

PACKAGE CODE

45

81

45

P

I

BASE QUANTITY

50/tube

800/reel

50/tube

800/reel

DELIVERY MODE

Tube

Tape and reel

Tube

Tape and reel

Note

(1)

AEC-Q101 qualified

(2)

60 V available in

D

2

PAK (TO-263AB)

package only

Revision: 16-Nov-17

Document Number: 88671

2

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

MBRF16xx, MBRB16xx

www.vishay.com

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T

C

= 25 °C unless otherwise noted)

20

Resistive or Inductive Load

100

Instantaneous Reverse Current (mA)

MBRB1635, MBRB1645

MBRB1660

10

Average Forward Current (A)

16

T

J

= 125 °C

12

1

T

J

= 75 °C

8

0.1

T

J

= 25 °C

0.01

4

0

50

100

150

0.001

0

20

40

60

80

100

Case Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Current Derating Curve

Fig. 4 - Typical Reverse Characteristics

150

10 000

T

J

= T

J

Max.

8.3

ms Single Half Sine-Wave

T

J

= 25 °C

f = 1.0 MHz

V

sig

= 50 mV

p-p

Peak Forward Surge Current (A)

100

Junction Capacitance (pF)

125

75

1000

50

25

MBR1635, MBR1645

MBR1660

100

1

10

100

0.1

1

10

100

0

Number

of Cycles at 60 Hz

Reverse Voltage (V)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Fig. 5 - Typical Junction Capacitance

100

T

J

= 150 °C

10

Pulse

Width

= 300

µs

1 % Duty Cycle

1

100

Transient Thermal Impedance (°C/W)

Instantaneous Forward Current (A)

10

T

J

= 25 °C

0.1

MBRB1635, MBRB1645

MBRB1660

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.1

0.01

0.1

1

10

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 6 -

Typical Transient Thermal Impedance

Revision: 16-Nov-17

Document Number: 88671

3

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

MBRF16xx, MBRB16xx

www.vishay.com

PACKAGE OUTLINE DIMENSIONS

in inches (millimeters)

ITO-220AC

0.404 (10.26)

0.384 (9.75)

0.076 (1.93) REF.

45° REF.

0.600 (15.24)

0.580 (14.73)

1

0.671 (17.04)

0.651 (16.54)

2

0.191 (4.85)

0.171 (4.35)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.035 (0.89)

0.025 (0.64)

0.205 (5.21)

0.195 (4.95)

7° REF.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

7° REF.

0.350 (8.89)

0.330 (8.38)

7° REF.

0.190 (4.83)

0.170 (4.32)

0.110 (2.79)

0.100 (2.54)

0.135 (3.43) DIA.

0.122 (3.08) DIA.

Vishay General Semiconductor

0.110 (2.79)

0.100 (2.54)

0.025 (0.64)

0.015 (0.38)

0.028 (0.71)

0.020 (0.51)

D

2

PAK (TO-263AB)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

K

0.360 (9.14)

0.320 (8.13)

1

K

2

0.055 (1.40)

0.047 (1.19)

0.190 (4.83)

0.160 (4.06)

0.055 (1.40)

0.045 (1.14)

Mounting Pad Layout

0.42 (10.66) min.

0.33 (8.38) min.

0.624 (15.85)

0.591 (15.00)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15 (3.81) min.

0.08 (2.032) MIN.

0.105 (2.67)

0.095 (2.41)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.205 (5.20)

0.195 (4.95)

0.140 (3.56)

0.110 (2.79)

Revision: 16-Nov-17

Document Number: 88671

4

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

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Revision: 08-Feb-17

1

Document Number: 91000

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	TO-220AC
package instruction	R-PSFM-T2
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.63 V
JEDEC-95 code	TO-220AC
JESD-30 code	R-PSFM-T2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	16 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	35 V
Maximum reverse current	200 µA
surface mount	NO
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30

MBR1635HE3/45

MBR1635HE3/45 Overview

MBR1635HE3/45 Parametric

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