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BFP 720FESD H6327

Description
transistors RF bipolar RF bip transistors
Categorysemiconductor    Discrete semiconductor   
File Size1MB,28 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BFP 720FESD H6327 Overview

transistors RF bipolar RF bip transistors

BFP 720FESD H6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryTransistors RF Bipol
RoHSYes
TypeRF Silicon Germanium
Maximum Operating Frequency43 GHz
Collector- Emitter Voltage VCEO Max4.2 V
Continuous Collector Curre30 mA
Maximum Operating Temperature+ 150 C
Power Dissipati100 mW
Mounting StyleSMD/SMT
Package / CaseTSFP-4-1
PackagingReel
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
BFP720FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2012-10-16
RF & Protection Devices
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