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GLT441M08-40J3

Description
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
File Size397KB,16 Pages
ManufacturerETC1
Download Datasheet View All

GLT441M08-40J3 Overview

512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
Features :
524
,288 words by 8 bits organization.
Fast access time and cycle time.
Low power dissipation.
Operating Current-150mA max.
TTL Standby Current-2mA max.
Read-Modify-Write,
RAS
-Only Refresh,
Description :
The GLT44108 is a 524,288 x 8 bit high-
performance CMOS dynamic random access
memory. The GLT44108 offers Fast Page mode with
asymmetric address and accepts 512-cycle refresh in
8ms interval.
All inputs are TTL compatible. Fast Page Mode
operation allows random access up to 512 x 8 bits
within a page, with cycle times as short as 22ns.
The GLT44108 is best suited for graphics, digital
signal processing and high performance peripherals.
CAS
-Before-
RAS
Refresh, Hidden
Refresh and Test Mode Capability.
1024 refresh cycles/16ms.
Available in 28pin 400 mil SOJ
Single +5.0V±10% Power Supply.
All inputs and Outputs are TTL-
compatible.
Fast Page Mode supports sustained data
rates up to 50MHZ.
PIN CONFIGURATION :
GLT44108
28 Lead SOJ
V
cc
DQ
0
DQ
1
DQ
2
DQ
3
NC
WE
RAS
A9
A
0
A
1
A
2
A
3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
DQ
7
DQ
6
DQ
5
DQ
4
CAS
OE
NC
A
8
A
7
A
6
A
5
A
4
V
SS
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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