Si86xx Data Sheet
1 Mbps, 2.5 kV
RMS
Digital Isolators
Silicon Lab's family of ultra-low-power digital isolators are CMOS devices offering sub-
stantial data rate, propagation delay, power, size, reliability, and external BOM advan-
tages over legacy isolation technologies. The operating parameters of these products
remain stable across wide temperature ranges and throughout device service life for
ease of design and highly uniform performance. All device versions have Schmitt trigger
inputs for high noise immunity and only require VDD bypass capacitors.
All products support Data rates up to 1 Mbps and Enable inputs which provide a single
point control for enabling and disabling output drive. All products are safety certified by
UL, CSA, VDE, and CQC and support withstand ratings up to 2.5 kV
RMS
.
Automotive Grade is available for certain part numbers. These products are built using
automotive-specific flows at all steps in the manufacturing process to ensure the robust-
ness and low defectivity required for automotive applications.
Industrial Applications
• Industrial automation systems
• Medical electronics
• Isolated switch mode supplies
• Isolated ADC, DAC
• Motor control
• Power inverters
• Communication systems
Safety Regulatory Approvals
• UL 1577 recognized
• Up to 5000 V
RMS
for 1 minute
• CSA component notice 5A approval
• IEC 60950-1, 61010-1
• VDE certification conformity
• IEC 60747-5-2 (VDE0884 Part 2)
• CQC certification approval
• GB4943.1
Automotive Applications
• On-board chargers
• Battery management systems
• Charging stations
• Traction inverters
• Hybrid Electric Vehicles
• Battery Electric Vehicles
KEY FEATURES
• High-speed operation
• DC to 1 Mbps
• No start-up initialization required
• Wide Operating Supply Voltage
• 2.5 to 5.5 V
• Up to 2500 V
RMS
isolation
• 60-year life at rated working voltage
• High electromagnetic immunity
• Ultra low power (typical)
• 5 V Operation: 1.6 mA per channel at 1
Mbps
• 2.5 V Operation: 1.5 mA per channel at
1 Mbps
• Tri-state outputs with ENABLE
• Schmitt trigger inputs
• Transient Immunity 50 kV/µs
• AEC-Q100 qualification
• Wide temperature range
• –40 to 125 °C
• RoHS-compliant packages
• SOIC-16 wide body
• SOIC-16 narrow body
• SOIC-8 narrow body
• Automotive-grade OPNs available
• AIAG compliant PPAP documentation
support
• IMDS and CAMDS listing support
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Rev. 1.02
Si86xx Data Sheet
Ordering Guide
1. Ordering Guide
Table 1.1. Ordering Guide for Valid OPNs
1,2
Ordering Part
Number (OPN)
Si8610AB-B-IS
Si8620AB-B-IS
Si8621AB-B-IS
Si8630AB-B-IS
Si8630AB-B-IS1
Si8631AB-B-IS
Si8631AB-B-IS1
Si8640AB-B-IS1
Si8640AB-B-IS
Si8641AB-B-IS1
Si8641AB-B-IS
Si8642AB-B-IS1
Si8642AB-B-IS
Si8650AB-B-IS1
Si8651AB-B-IS1
Si8652AB-B-IS1
Si8660AB-B-IS1
Si8661AB-B-IS1
Si8662AB-B-IS1
Si8663AB-B-IS1
Number of
Inputs
VDD1 Side
1
2
1
3
3
2
2
4
4
3
3
2
2
5
4
3
6
5
4
3
Number of
Inputs
VDD2 Side
0
0
1
0
0
1
1
0
0
1
1
2
2
0
1
2
0
1
2
3
Max Data
Rate (Mbps)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Default Out-
put State
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Isolation
Rating (kV)
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Temp (°C)
Package
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
SOIC-8
SOIC-8
SOIC-8
WB SOIC-16
NB SOIC-16
WB SOIC-16
NB SOIC-16
NB SOIC-16
WB SOIC-16
NB SOIC-16
WB SOIC-16
NB SOIC-16
WB SOIC-16
NB SOIC-16
NB SOIC-16
NB SOIC-16
NB SOIC-16
NB SOIC-16
NB SOIC-16
NB SOIC-16
Notes:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifica-
tions and peak solder temperatures.
2. “Si” and “SI” are used interchangeably.
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Rev. 1.02 | 2
Si86xx Data Sheet
Ordering Guide
Automotive Grade OPNs
Automotive-grade devices are built using automotive-specific flows at all steps in the manufacturing process to ensure robustness and
low defectivity. These devices are supported with AIAG-compliant Production Part Approval Process (PPAP) documentation, and fea-
ture International Material Data System (IMDS) and China Automotive Material Data System (CAMDS) listing. Qualifications are compli-
ant with AEC-Q100, and a zero-defect methodology is maintained throughout definition, design, evaluation, qualification, and mass pro-
duction steps.
Table 1.2. Ordering Guide for Automotive Grade OPNs
1, 2, 4, 5
Ordering Part Number
(OPN)
Si8621AB-AS
SI8641AB-AS1
SI8642AB-AS1
Si8663AB-AS1
Number of
Inputs
VDD1 Side
1
3
2
3
Number of
Inputs
VDD2 Side
1
1
2
3
Max Data
Rate
(Mbps)
1
1
1
1
Default
Output
State
Low
Low
Low
Low
Isolation
Rating (kV)
2.5
2.5
2.5
2.5
Temp (°C)
Package
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
–40 to 125 °C
SOIC-8
NB SOIC-16
NB SOIC-16
SOIC-16
Note:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifica-
tions.
2. “Si” and “SI” are used interchangeably.
3. An "R" at the end of the part number denotes tape and reel packaging option.
4. Automotive-Grade devices (with an "–A" suffix) are identical in construction materials, topside marking, and electrical parameters
to their Industrial-Grade (with a "–I" suffix) version counterparts. Automotive-Grade products are produced utilizing full automotive
process flows and additional statistical process controls throughout the manufacturing flow. The Automotive-Grade part number is
included on shipping labels.
5. Additional Ordering Part Numbers may be available in Automotive-Grade. Please contact your local Silicon Labs sales represen-
tative for further information.
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Rev. 1.02 | 3
Table of Contents
1. Ordering Guide
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2. Functional Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Theory of Operation .
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. 5
3. Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Device Startup .
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. 8
. 8
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. 8
. 8
3.2 Undervoltage Lockout
3.3 Layout Recommendations .
3.3.1 Supply Bypass . . .
3.3.2 Output Pin Termination.
4. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5. Pin Descriptions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
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.30
.31
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.33
.34
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5.1 Pin Descriptions (Si861x/2x Narrow Body SOIC-8) .
5.2 Pin Descriptions (Si863x)
5.3 Pin Descriptions (Si864x)
5.5 Pin Descriptions (Si866x)
5.4 Pin Descriptions (Si8650/51/52) .
6. Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.1 Package Outline (16-Pin Wide Body SOIC) .
6.2 Package Outline (16-Pin Narrow Body SOIC).
6.3 Package Outline (8-Pin Narrow Body SOIC) .
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35
.35
.37
.39
7. Land Patterns
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.40
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.42
7.1 Land Pattern (16-Pin Wide-Body SOIC)
7.2 Land Pattern (16-Pin Narrow Body SOIC) .
7.3 Land Pattern (8-Pin Narrow Body SOIC) .
8. Top Markings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
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.43
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8.1 Top Marking (16-Pin Wide Body SOIC) .
8.3 Top Marking (8-Pin Narrow Body SOIC)
8.2 Top Marking (16-Pin Narrow Body SOIC) .
9. Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
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Rev. 1.02 | 4
Si86xx Data Sheet
Functional Description
2. Functional Description
2.1 Theory of Operation
The operation of an Si86xx channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This
simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified
block diagram for a single Si86xx channel is shown in the figure below.
Transmitter
RF
OSCILLATOR
Receiver
A
MODULATOR
Semiconductor-
Based Isolation
Barrier
DEMODULATOR
B
Figure 2.1. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the
Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that
decodes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying
scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and better immunity to
magnetic fields. See the figure below for more details.
Input Signal
Modulation Signal
Output Signal
Figure 2.2. Modulation Scheme
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Rev. 1.02 | 5
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